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Conference Paper: Improved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications

TitleImproved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications
Authors
Issue Date2015
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://www.ecsdl.org/ECST/
Citation
227th ECS Meeting, Chicago, IL., USA, 24-28 May 2015. In ECS Transactions, 2015, v. 66 n. 5, p. 117-120 How to Cite?
AbstractThe charge-trapping characteristics of Hf doped SrTiO3 have been studied based on Al/Al2O3/Hf-doped SrTiO3/SiO2/Si capacitors. The thermodynamic stability of the SrTiO3 film is significantly improved by Hf incorporation, thus resulting in negligible formation of an interlayer at the Hf-doped SrTiO3/SiO2 interface, as confirmed by X-ray photoelectron spectroscopy and transmission electron microscopy. The memory device with Hf-doped SrTiO3 as charge-trapping layer displays high speed at low operating voltage (a VFB shift of 1.9 V at +6 V, 100 ms) and good data retention (charge loss of 12.7% after 104 s). Therefore, the Hf-doped SrTiO3 film is a promising material as charge-trapping layer for high-performance nonvolatile memory applications.
Persistent Identifierhttp://hdl.handle.net/10722/217385
ISSN
2015 SCImago Journal Rankings: 0.212

 

DC FieldValueLanguage
dc.contributor.authorHuang, XD-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T05:58:05Z-
dc.date.available2015-09-18T05:58:05Z-
dc.date.issued2015-
dc.identifier.citation227th ECS Meeting, Chicago, IL., USA, 24-28 May 2015. In ECS Transactions, 2015, v. 66 n. 5, p. 117-120-
dc.identifier.issn1938-6737-
dc.identifier.urihttp://hdl.handle.net/10722/217385-
dc.description.abstractThe charge-trapping characteristics of Hf doped SrTiO3 have been studied based on Al/Al2O3/Hf-doped SrTiO3/SiO2/Si capacitors. The thermodynamic stability of the SrTiO3 film is significantly improved by Hf incorporation, thus resulting in negligible formation of an interlayer at the Hf-doped SrTiO3/SiO2 interface, as confirmed by X-ray photoelectron spectroscopy and transmission electron microscopy. The memory device with Hf-doped SrTiO3 as charge-trapping layer displays high speed at low operating voltage (a VFB shift of 1.9 V at +6 V, 100 ms) and good data retention (charge loss of 12.7% after 104 s). Therefore, the Hf-doped SrTiO3 film is a promising material as charge-trapping layer for high-performance nonvolatile memory applications.-
dc.languageeng-
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://www.ecsdl.org/ECST/-
dc.relation.ispartofECS Transactions-
dc.rightsECS Transactions. Copyright © Electrochemical Society, Inc.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleImproved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepostprint-
dc.identifier.doi10.1149/06605.0117ecst-
dc.identifier.hkuros254235-
dc.identifier.volume66-
dc.identifier.issue5-
dc.identifier.spage117-
dc.identifier.epage120-
dc.publisher.placeUnited States-

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