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Article: Nb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications

TitleNb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Authors
Issue Date2015
PublisherIEEE.
Citation
IEEE Transactions on Device and Materials Reliability, 2015, v. 15, p. 123-126 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/217026

 

DC FieldValueLanguage
dc.contributor.authorShi, RP-
dc.contributor.authorHuang, XD-
dc.contributor.authorLeung, CH-
dc.contributor.authorSin, JKO-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T05:46:23Z-
dc.date.available2015-09-18T05:46:23Z-
dc.date.issued2015-
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2015, v. 15, p. 123-126-
dc.identifier.urihttp://hdl.handle.net/10722/217026-
dc.languageeng-
dc.publisherIEEE.-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliability-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.titleNb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications-
dc.typeArticle-
dc.identifier.emailLeung, CH: hreelch@HKUCC.hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLeung, CH=rp00146-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TDMR.2014.2376514-
dc.identifier.hkuros254199-
dc.identifier.volume15-
dc.identifier.spage123-
dc.identifier.epage126-

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