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Article: Improved electrical characteristics of amorphous InGaZnO thin-film transistor with HfLaO gate dielectric by nitrogen incorporation

TitleImproved electrical characteristics of amorphous InGaZnO thin-film transistor with HfLaO gate dielectric by nitrogen incorporation
Authors
Song, JQian, LLeung, CHLai, PT
Issue Date2015
PublisherJapan Society of Applied Physics, co-published with Institute of Pure and Applied Physics. The Journal's web site is located at http://apex.jsap.jp/
Citation
Applied Physics Express, 2015, v. 8 n. 6, article no. 066503 How to Cite?
DOI: http://dx.doi.org/10.7567/APEX.8.066503
Persistent Identifierhttp://hdl.handle.net/10722/216945
ISSN
1882-0778
2021 Impact Factor: 2.819
2020 SCImago Journal Rankings: 0.911
ISI Accession Number ID
WOS:000358071400052

 

DC FieldValueLanguage
dc.contributor.authorSong, J-
dc.contributor.authorQian, L-
dc.contributor.authorLeung, CH-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T05:43:45Z-
dc.date.available2015-09-18T05:43:45Z-
dc.date.issued2015-
dc.identifier.citationApplied Physics Express, 2015, v. 8 n. 6, article no. 066503-
dc.identifier.issn1882-0778-
dc.identifier.urihttp://hdl.handle.net/10722/216945-
dc.languageeng-
dc.publisherJapan Society of Applied Physics, co-published with Institute of Pure and Applied Physics. The Journal's web site is located at http://apex.jsap.jp/-
dc.relation.ispartofApplied Physics Express-
dc.titleImproved electrical characteristics of amorphous InGaZnO thin-film transistor with HfLaO gate dielectric by nitrogen incorporation-
dc.typeArticle-
dc.identifier.emailLeung, CH: chleung@eee.hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLeung, CH=rp00146-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.7567/APEX.8.066503-
dc.identifier.scopuseid_2-s2.0-84930692236-
dc.identifier.hkuros250745-
dc.identifier.volume8-
dc.identifier.issue6-
dc.identifier.isiWOS:000358071400052-
dc.publisher.placeJapan-
dc.identifier.issnl1882-0778-

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