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Article: Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation

TitlePassivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation
Authors
Issue Date2015
PublisherAmerican Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/
Citation
Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics, 2015, v. 33 n. 5, article no. 050601, p. 050601:1-5 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/216922
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLiu, L-
dc.contributor.authorChoi, HW-
dc.contributor.authorLai, PT-
dc.contributor.authorXu, JP-
dc.date.accessioned2015-09-18T05:43:03Z-
dc.date.available2015-09-18T05:43:03Z-
dc.date.issued2015-
dc.identifier.citationJournal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics, 2015, v. 33 n. 5, article no. 050601, p. 050601:1-5-
dc.identifier.issn2166-2746-
dc.identifier.urihttp://hdl.handle.net/10722/216922-
dc.languageeng-
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/-
dc.relation.ispartofJournal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics-
dc.rightsCopyright 2015 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics, 2015, v. 33 n. 5, article no. 050601 and may be found at http://scitation.aip.org/content/avs/journal/jvstb/33/5/10.1116/1.4927483-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titlePassivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation-
dc.typeArticle-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1116/1.4927483-
dc.identifier.hkuros250316-
dc.identifier.volume33-
dc.identifier.issue5-
dc.identifier.spage050601:1-
dc.identifier.epage050601:5-
dc.publisher.placeUnited States-

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