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Article: Composition-dependent band gaps and indirect–direct band gap transitions of group-IV semiconductor alloys

TitleComposition-dependent band gaps and indirect–direct band gap transitions of group-IV semiconductor alloys
Authors
Issue Date2015
Citation
Physical Chemistry Chemical Physics, 2015, v. 17 n. 33, 21605-21610 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/214468

 

DC FieldValueLanguage
dc.contributor.authorZhu, Z-
dc.contributor.authorXiao, J-
dc.contributor.authorSun, H-
dc.contributor.authorHu, Y-
dc.contributor.authorCao, R-
dc.contributor.authorWang, Y-
dc.contributor.authorZhao, L-
dc.contributor.authorZhuang, J-
dc.date.accessioned2015-08-21T11:28:38Z-
dc.date.available2015-08-21T11:28:38Z-
dc.date.issued2015-
dc.identifier.citationPhysical Chemistry Chemical Physics, 2015, v. 17 n. 33, 21605-21610-
dc.identifier.urihttp://hdl.handle.net/10722/214468-
dc.languageeng-
dc.relation.ispartofPhysical Chemistry Chemical Physics-
dc.titleComposition-dependent band gaps and indirect–direct band gap transitions of group-IV semiconductor alloys-
dc.typeArticle-
dc.identifier.emailWang, Y: yinwang@hku.hk-
dc.identifier.authorityWang, Y=rp01851-
dc.identifier.doi10.1039/C5CP02558C-
dc.identifier.hkuros247627-

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