File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Book Chapter: Carbon Nanotube Schottky Photodiodes

TitleCarbon Nanotube Schottky Photodiodes
Authors
KeywordsSchottky barriers
Electron-hole pair
Fermi energy
Photodetectors
Photodiodes
Carbon nanotubes (CNTs)
Issue Date2012
Citation
Nano Optoelectronic Sensors and Devices, 2012, p. 107-123 How to Cite?
AbstractThis chapter deals with the fabrication and investigation of carbon nanotubes-based Schottky photodiodes using different metals and structures. It is found that the work functions of metals play an important role in determining the properties of the photodiodes. Symmetric Schottky photodiodes using different metals have varied dark current and photocurrent of several orders of magnitude. Low built-in potentials resulted in large dark current and photocurrent, while high built-in potentials caused smaller dark current and photocurrent. Two Schottky barriers reversely connecting with each other in the symmetric metal structure, which was verified by position-dependent photocurrent measurements, can explain this. In order to improve the performance of CNT-based Schottky photodiodes, asymmetric structure photodiodes using metals with high/low work functions at two contacts were fabricated. Compared to the symmetric photodiodes, asymmetric photodiodes had lower dark current and higher photocurrent. © 2012 Elsevier Inc. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/213335

 

DC FieldValueLanguage
dc.contributor.authorChen, Hongzhi-
dc.contributor.authorXi, Ning-
dc.contributor.authorLai, King Wai Chiu-
dc.date.accessioned2015-07-28T04:06:56Z-
dc.date.available2015-07-28T04:06:56Z-
dc.date.issued2012-
dc.identifier.citationNano Optoelectronic Sensors and Devices, 2012, p. 107-123-
dc.identifier.urihttp://hdl.handle.net/10722/213335-
dc.description.abstractThis chapter deals with the fabrication and investigation of carbon nanotubes-based Schottky photodiodes using different metals and structures. It is found that the work functions of metals play an important role in determining the properties of the photodiodes. Symmetric Schottky photodiodes using different metals have varied dark current and photocurrent of several orders of magnitude. Low built-in potentials resulted in large dark current and photocurrent, while high built-in potentials caused smaller dark current and photocurrent. Two Schottky barriers reversely connecting with each other in the symmetric metal structure, which was verified by position-dependent photocurrent measurements, can explain this. In order to improve the performance of CNT-based Schottky photodiodes, asymmetric structure photodiodes using metals with high/low work functions at two contacts were fabricated. Compared to the symmetric photodiodes, asymmetric photodiodes had lower dark current and higher photocurrent. © 2012 Elsevier Inc. All rights reserved.-
dc.languageeng-
dc.relation.ispartofNano Optoelectronic Sensors and Devices-
dc.subjectSchottky barriers-
dc.subjectElectron-hole pair-
dc.subjectFermi energy-
dc.subjectPhotodetectors-
dc.subjectPhotodiodes-
dc.subjectCarbon nanotubes (CNTs)-
dc.titleCarbon Nanotube Schottky Photodiodes-
dc.typeBook_Chapter-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1016/B978-1-4377-3471-3.00007-1-
dc.identifier.scopuseid_2-s2.0-84882462701-
dc.identifier.spage107-
dc.identifier.epage123-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats