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Article: Gate dependent photo-responses of carbon nanotube field effect phototransistors

TitleGate dependent photo-responses of carbon nanotube field effect phototransistors
Authors
Issue Date2012
Citation
Nanotechnology, 2012, v. 23, n. 38 How to Cite?
AbstractGate dependent photoconductivity of carbon nanotube (CNT) field effect phototransistors (FEPs) was systematically investigated in this study. The photo-response comparisons of CNT FEPs with symmetric and asymmetric metal structures connecting to the same CNT revealed that the gate effect contributed to a sensitivity improvement with a lower dark current, a higher photocurrent, and an enhanced photovoltage. A functionalized asymmetric FEP, fabricated by partially doping the CNT utilizing a polyethylene imine (PEI) polymer, verified that FEPs delivered a better performance by using asymmetric structures. A multi-gate FEP, with three pairs of side-gates that can electrostatically dope different sections of a CNT independently, was fabricated to examine the gate structure dependent photo-responses. Experimental measurements showed an unconventional photocurrent improvement that was weakly dependent on the gate location, which was attributed to the unique charge distribution of one-dimensional semiconductors. © 2012 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/213263
ISSN
2015 Impact Factor: 3.573
2015 SCImago Journal Rankings: 1.196

 

DC FieldValueLanguage
dc.contributor.authorChen, H. Z.-
dc.contributor.authorXi, N.-
dc.contributor.authorLai, K. W C-
dc.contributor.authorChen, L. L.-
dc.contributor.authorYang, R. G.-
dc.contributor.authorSong, B.-
dc.date.accessioned2015-07-28T04:06:42Z-
dc.date.available2015-07-28T04:06:42Z-
dc.date.issued2012-
dc.identifier.citationNanotechnology, 2012, v. 23, n. 38-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10722/213263-
dc.description.abstractGate dependent photoconductivity of carbon nanotube (CNT) field effect phototransistors (FEPs) was systematically investigated in this study. The photo-response comparisons of CNT FEPs with symmetric and asymmetric metal structures connecting to the same CNT revealed that the gate effect contributed to a sensitivity improvement with a lower dark current, a higher photocurrent, and an enhanced photovoltage. A functionalized asymmetric FEP, fabricated by partially doping the CNT utilizing a polyethylene imine (PEI) polymer, verified that FEPs delivered a better performance by using asymmetric structures. A multi-gate FEP, with three pairs of side-gates that can electrostatically dope different sections of a CNT independently, was fabricated to examine the gate structure dependent photo-responses. Experimental measurements showed an unconventional photocurrent improvement that was weakly dependent on the gate location, which was attributed to the unique charge distribution of one-dimensional semiconductors. © 2012 IOP Publishing Ltd.-
dc.languageeng-
dc.relation.ispartofNanotechnology-
dc.titleGate dependent photo-responses of carbon nanotube field effect phototransistors-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/23/38/385203-
dc.identifier.pmid22948041-
dc.identifier.scopuseid_2-s2.0-84866116814-
dc.identifier.volume23-
dc.identifier.issue38-
dc.identifier.eissn1361-6528-

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