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Conference Paper: Zero-bandgap graphene for infrared sensing applications

TitleZero-bandgap graphene for infrared sensing applications
Authors
KeywordsGraphene
Photovoltaic Effect
Infrared Detector
Issue Date2011
Citation
Proceedings of SPIE - The International Society for Optical Engineering, 2011, v. 8031 How to Cite?
AbstractRecently, scientists have been looking for novel materials to improve the performance of optoelectronic devices. Graphene opens up new possibilities for infrared (IR) sensing applications. With a zero-bandgap graphene, electron-hole pairs can be generated easily by low energy photons such as middle-wave infrared signal. We have used an electricfield- assisted method to manipulate graphene between metal microelectrodes successfully. When a graphene contacts with a metal, a built-in potential forms at the interface and it separates the electron-hole pairs that flow as photocurrents. Based on this principle, we demonstrated using the graphene-based devices for infrared detection under a zero-bias operation. We also tried to apply the devices with positive and negative bias voltages, and results indicated the flow of photocurrent is independent of the polarity of the bias voltages. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
Persistent Identifierhttp://hdl.handle.net/10722/213182
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLai, King Wai Chiu-
dc.contributor.authorXi, Ning-
dc.contributor.authorChen, Hongzhi-
dc.contributor.authorFung, Carmen Kar Man-
dc.contributor.authorChen, Liangliang-
dc.date.accessioned2015-07-28T04:06:26Z-
dc.date.available2015-07-28T04:06:26Z-
dc.date.issued2011-
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, 2011, v. 8031-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/213182-
dc.description.abstractRecently, scientists have been looking for novel materials to improve the performance of optoelectronic devices. Graphene opens up new possibilities for infrared (IR) sensing applications. With a zero-bandgap graphene, electron-hole pairs can be generated easily by low energy photons such as middle-wave infrared signal. We have used an electricfield- assisted method to manipulate graphene between metal microelectrodes successfully. When a graphene contacts with a metal, a built-in potential forms at the interface and it separates the electron-hole pairs that flow as photocurrents. Based on this principle, we demonstrated using the graphene-based devices for infrared detection under a zero-bias operation. We also tried to apply the devices with positive and negative bias voltages, and results indicated the flow of photocurrent is independent of the polarity of the bias voltages. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).-
dc.languageeng-
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering-
dc.subjectGraphene-
dc.subjectPhotovoltaic Effect-
dc.subjectInfrared Detector-
dc.titleZero-bandgap graphene for infrared sensing applications-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1117/12.883597-
dc.identifier.scopuseid_2-s2.0-79957993480-
dc.identifier.volume8031-

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