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Conference Paper: Improving the detectability of CNT based infrared sensors using multi-gate field effect transistor

TitleImproving the detectability of CNT based infrared sensors using multi-gate field effect transistor
Authors
KeywordsCarbon nanotube
Field-effect transistor
Optoelectronics
Infrared detector
Issue Date2010
Citation
2010 10th IEEE Conference on Nanotechnology, NANO 2010, 2010, p. 727-731 How to Cite?
AbstractCarbon nanotube (CNT) is a novel one dimensional (1D) material that has unique electrical and optoelectronic properties. Photo-sensors using CNT can sense infrared signals by using Schottky barriers between metal and nanotube, which are able to separate photo-generated electron-hole pairs in order to generate photocurrent or photovoltage for detection and quantification. It has been demonstrated that both asymmetric metal structure and electrical field can improve the performance of the sensors by manipulating the energy alignment between metal and CNT. However, it is not clear how to optimize the design of the CNT photo-sensors. An asymmetric multi-gate field effect transistor based infrared detector was fabricated, integrating with asymmetric metal structure (Au-CNT-Al) and multiple gates, which allow for controlling the doping level at source, drain and channel independently. It was found that dark current was suppressed and photocurrent was enhanced by applying negative gate voltages, thus improving sensor's performance. The CNT detector exhibited similar photo-response when modulating the doping level of CNT segments at source, drain and bulk. We ascribe this to the charge distribution that has a long tail extending over the whole tube. ©2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/213151

 

DC FieldValueLanguage
dc.contributor.authorChen, Hongzhi-
dc.contributor.authorXi, Ning-
dc.contributor.authorLai, King W C-
dc.contributor.authorFung, Carmen K M-
dc.contributor.authorYang, Ruiguo-
dc.date.accessioned2015-07-28T04:06:18Z-
dc.date.available2015-07-28T04:06:18Z-
dc.date.issued2010-
dc.identifier.citation2010 10th IEEE Conference on Nanotechnology, NANO 2010, 2010, p. 727-731-
dc.identifier.urihttp://hdl.handle.net/10722/213151-
dc.description.abstractCarbon nanotube (CNT) is a novel one dimensional (1D) material that has unique electrical and optoelectronic properties. Photo-sensors using CNT can sense infrared signals by using Schottky barriers between metal and nanotube, which are able to separate photo-generated electron-hole pairs in order to generate photocurrent or photovoltage for detection and quantification. It has been demonstrated that both asymmetric metal structure and electrical field can improve the performance of the sensors by manipulating the energy alignment between metal and CNT. However, it is not clear how to optimize the design of the CNT photo-sensors. An asymmetric multi-gate field effect transistor based infrared detector was fabricated, integrating with asymmetric metal structure (Au-CNT-Al) and multiple gates, which allow for controlling the doping level at source, drain and channel independently. It was found that dark current was suppressed and photocurrent was enhanced by applying negative gate voltages, thus improving sensor's performance. The CNT detector exhibited similar photo-response when modulating the doping level of CNT segments at source, drain and bulk. We ascribe this to the charge distribution that has a long tail extending over the whole tube. ©2010 IEEE.-
dc.languageeng-
dc.relation.ispartof2010 10th IEEE Conference on Nanotechnology, NANO 2010-
dc.subjectCarbon nanotube-
dc.subjectField-effect transistor-
dc.subjectOptoelectronics-
dc.subjectInfrared detector-
dc.titleImproving the detectability of CNT based infrared sensors using multi-gate field effect transistor-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/NANO.2010.5697813-
dc.identifier.scopuseid_2-s2.0-79951838503-
dc.identifier.spage727-
dc.identifier.epage731-

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