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Conference Paper: Development of infrared detectors using single carbon-nanotube-based field-effect transistors

TitleDevelopment of infrared detectors using single carbon-nanotube-based field-effect transistors
Authors
KeywordsCarbon nanotube (CNT)
Optoelectronics
IR detector
Field-effect transistor
Issue Date2010
Citation
IEEE Transactions on Nanotechnology, 2010, v. 9, n. 5, p. 582-589 How to Cite?
AbstractCarbon nanotube is a promising material to fabricate high-performance nanoscale-optoelectronic devices owing to its unique 1-D structure. In particular, different types of carbonnanotube- infrared detectors have been developed. However, most previous reported carbon-nanotube-IR detectors showed poor device characteristics due to limited understanding of their working principles. In this paper, three types of IR detectors were fabricated using carbon-nanotube field effect transistors (CNTFETs) to investigate their performance: 1) symmetric Au-CNT-Au CNTFET IR detector; 2) symmetric Ag-CNT-Ag CNTFET IR detector; and 3) asymmetric Ag-CNT-Au CNTFET IR detector. The theoretical analyses and experimental results have shown that the IR detector using an individual single-wall carbon nanotube (SWCNT), with asymmetric Ag-CNT-Au CNTFET structure, can suppress dark current and increase photocurrent by electrostatic doping. As a result, an open-circuit voltage of 0.45 V under IR illumination was generated, which is the highest value reported to date for an individual SWCNT-based photodetector. The results reported in this paper have demonstrated that the CNTFET can be used to develop high-performance IR sensors.
Persistent Identifierhttp://hdl.handle.net/10722/213122
ISSN
2015 Impact Factor: 1.702
2015 SCImago Journal Rankings: 0.708

 

DC FieldValueLanguage
dc.contributor.authorChen, Hongzhi-
dc.contributor.authorXi, Ning-
dc.contributor.authorLai, King W C-
dc.contributor.authorFung, Carmen K M-
dc.contributor.authorYans, Ruiguo-
dc.date.accessioned2015-07-28T04:06:12Z-
dc.date.available2015-07-28T04:06:12Z-
dc.date.issued2010-
dc.identifier.citationIEEE Transactions on Nanotechnology, 2010, v. 9, n. 5, p. 582-589-
dc.identifier.issn1536-125X-
dc.identifier.urihttp://hdl.handle.net/10722/213122-
dc.description.abstractCarbon nanotube is a promising material to fabricate high-performance nanoscale-optoelectronic devices owing to its unique 1-D structure. In particular, different types of carbonnanotube- infrared detectors have been developed. However, most previous reported carbon-nanotube-IR detectors showed poor device characteristics due to limited understanding of their working principles. In this paper, three types of IR detectors were fabricated using carbon-nanotube field effect transistors (CNTFETs) to investigate their performance: 1) symmetric Au-CNT-Au CNTFET IR detector; 2) symmetric Ag-CNT-Ag CNTFET IR detector; and 3) asymmetric Ag-CNT-Au CNTFET IR detector. The theoretical analyses and experimental results have shown that the IR detector using an individual single-wall carbon nanotube (SWCNT), with asymmetric Ag-CNT-Au CNTFET structure, can suppress dark current and increase photocurrent by electrostatic doping. As a result, an open-circuit voltage of 0.45 V under IR illumination was generated, which is the highest value reported to date for an individual SWCNT-based photodetector. The results reported in this paper have demonstrated that the CNTFET can be used to develop high-performance IR sensors.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Nanotechnology-
dc.subjectCarbon nanotube (CNT)-
dc.subjectOptoelectronics-
dc.subjectIR detector-
dc.subjectField-effect transistor-
dc.titleDevelopment of infrared detectors using single carbon-nanotube-based field-effect transistors-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TNANO.2010.2053216-
dc.identifier.scopuseid_2-s2.0-77956629102-
dc.identifier.volume9-
dc.identifier.issue5-
dc.identifier.spage582-
dc.identifier.epage589-

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