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Conference Paper: Infrared detection using carbon nanotube field effect transistor

TitleInfrared detection using carbon nanotube field effect transistor
Authors
KeywordsCarbon nanotubes (CNTs)
Photodiode
Field-effect transistors (FETs)
Infrared (IR) detector
Issue Date2008
Citation
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, 2008, p. 88-91 How to Cite?
AbstractCarbon nanotube (CNT) based infrared (IR) detectors have been reported and shown promising properties taking advantage of its one dimensional structure and unique electrical properties. The CNT photodiodes detect IR signal through Schottky barriers that are formed when metal and semiconductor CNT come into contact due to the difference of the energy levels. However, the generated photocurrent was small due to the structure of the CNT photodiodes, consisting of two reversely connected Schottky diodes. In addition, the mechanism of the Schottky barriers of these photodiodes were not well understood. In this paper, a CNT Field Effect Transistor (CNTFET) is designed and used as an IR detector, improving the performance by tuning the doping level of the CNT through the gate.By introducing the gate as in CNTFET to the photodiodes, the Fermi levels of the CNTs are able to be adjusted by the electrostatic doping, as a result the dark currents of CNT photodiodes can be screened. On the other hand, the photocurrent is determined by the capability of Schottky barriers to separated photogenerated electron and hole pairs, thus gate can shift the Fermi level of a CNT to the most sensitive level in order to produce a maximum photocurrent. The test results from the proposed CNTFET IR detectors provided a better understanding of its working principle in order to inspire optimal design of a CNT photodetector. The experimental results showed the photocurrent was proportional to the depletion width of Schottky barriers. © 2008 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/213026

 

DC FieldValueLanguage
dc.contributor.authorChen, Hongzhi-
dc.contributor.authorXi, Ning-
dc.contributor.authorKing Lai, Wai Chiu-
dc.contributor.authorZhang, Jiangbo-
dc.contributor.authorLuo, Yilun-
dc.date.accessioned2015-07-28T04:05:49Z-
dc.date.available2015-07-28T04:05:49Z-
dc.date.issued2008-
dc.identifier.citation2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, 2008, p. 88-91-
dc.identifier.urihttp://hdl.handle.net/10722/213026-
dc.description.abstractCarbon nanotube (CNT) based infrared (IR) detectors have been reported and shown promising properties taking advantage of its one dimensional structure and unique electrical properties. The CNT photodiodes detect IR signal through Schottky barriers that are formed when metal and semiconductor CNT come into contact due to the difference of the energy levels. However, the generated photocurrent was small due to the structure of the CNT photodiodes, consisting of two reversely connected Schottky diodes. In addition, the mechanism of the Schottky barriers of these photodiodes were not well understood. In this paper, a CNT Field Effect Transistor (CNTFET) is designed and used as an IR detector, improving the performance by tuning the doping level of the CNT through the gate.By introducing the gate as in CNTFET to the photodiodes, the Fermi levels of the CNTs are able to be adjusted by the electrostatic doping, as a result the dark currents of CNT photodiodes can be screened. On the other hand, the photocurrent is determined by the capability of Schottky barriers to separated photogenerated electron and hole pairs, thus gate can shift the Fermi level of a CNT to the most sensitive level in order to produce a maximum photocurrent. The test results from the proposed CNTFET IR detectors provided a better understanding of its working principle in order to inspire optimal design of a CNT photodetector. The experimental results showed the photocurrent was proportional to the depletion width of Schottky barriers. © 2008 IEEE.-
dc.languageeng-
dc.relation.ispartof2008 8th IEEE Conference on Nanotechnology, IEEE-NANO-
dc.subjectCarbon nanotubes (CNTs)-
dc.subjectPhotodiode-
dc.subjectField-effect transistors (FETs)-
dc.subjectInfrared (IR) detector-
dc.titleInfrared detection using carbon nanotube field effect transistor-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/NANO.2008.33-
dc.identifier.scopuseid_2-s2.0-55349134894-
dc.identifier.spage88-
dc.identifier.epage91-

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