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postgraduate thesis: Laplace transform deep level transient spectroscopic study on PLD grown ZnO

TitleLaplace transform deep level transient spectroscopic study on PLD grown ZnO
Authors
Issue Date2015
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Ho, L. [何樂平]. (2015). Laplace transform deep level transient spectroscopic study on PLD grown ZnO. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5481905
AbstractThe fundamental physics and techniques employed in Laplace transform deep level transient spectroscopy (L-DLTS) are reviewed. A Laplace-DLTS system has been constructed. The high resolving power of this system has been demonstrated experimentally. The L-DLTS system was applied to characterize the defects in undoped n-type ZnO thin film grown by the pulsed laser deposition (PLD) method. A 0.3 eV deep trap has been identified. The formations of Ec-0.39eV and Ec-0.20eVcan be enhanced when the sample surface is seriously damaged by high temperature annealing.AnEc-0.25eV trap is identified in the freshly grown samples, but would disappear after the storage of 3 months. Copper doped n-type ZnO thin film samples with low carrier concentration (n~〖10〗^16 〖cm〗^(-3)) were investigated by using both conventional and Laplace DLTS techniques. Positive DLTS signal peaks were detected that are suspected to be contributed by the minority carrier (hole carrier) emission. A physics model involving the inversion layer of a metal-insulator-semiconductor contact has been invoked to interpret the hole carrier concentration existing near the metal-semiconductor interface. Expression for the defect concentration is determined as a function of the temperature of DLTS peaks. AnEv+0.6eV defect with high concentration (N_T~〖10〗^17 〖cm〗^(-3)) was detected. The concentration of Ev+0.6eVcan be enhanced when the annealing temperature was increased from 750 to 900 degree C.
DegreeMaster of Philosophy
SubjectLaplace transformation
Zinc oxide - Defects
Deep level transient spectroscopy
Dept/ProgramPhysics
Persistent Identifierhttp://hdl.handle.net/10722/211117

 

DC FieldValueLanguage
dc.contributor.authorHo, Lok-ping-
dc.contributor.author何樂平-
dc.date.accessioned2015-07-07T23:10:41Z-
dc.date.available2015-07-07T23:10:41Z-
dc.date.issued2015-
dc.identifier.citationHo, L. [何樂平]. (2015). Laplace transform deep level transient spectroscopic study on PLD grown ZnO. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5481905-
dc.identifier.urihttp://hdl.handle.net/10722/211117-
dc.description.abstractThe fundamental physics and techniques employed in Laplace transform deep level transient spectroscopy (L-DLTS) are reviewed. A Laplace-DLTS system has been constructed. The high resolving power of this system has been demonstrated experimentally. The L-DLTS system was applied to characterize the defects in undoped n-type ZnO thin film grown by the pulsed laser deposition (PLD) method. A 0.3 eV deep trap has been identified. The formations of Ec-0.39eV and Ec-0.20eVcan be enhanced when the sample surface is seriously damaged by high temperature annealing.AnEc-0.25eV trap is identified in the freshly grown samples, but would disappear after the storage of 3 months. Copper doped n-type ZnO thin film samples with low carrier concentration (n~〖10〗^16 〖cm〗^(-3)) were investigated by using both conventional and Laplace DLTS techniques. Positive DLTS signal peaks were detected that are suspected to be contributed by the minority carrier (hole carrier) emission. A physics model involving the inversion layer of a metal-insulator-semiconductor contact has been invoked to interpret the hole carrier concentration existing near the metal-semiconductor interface. Expression for the defect concentration is determined as a function of the temperature of DLTS peaks. AnEv+0.6eV defect with high concentration (N_T~〖10〗^17 〖cm〗^(-3)) was detected. The concentration of Ev+0.6eVcan be enhanced when the annealing temperature was increased from 750 to 900 degree C.-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subject.lcshLaplace transformation-
dc.subject.lcshZinc oxide - Defects-
dc.subject.lcshDeep level transient spectroscopy-
dc.titleLaplace transform deep level transient spectroscopic study on PLD grown ZnO-
dc.typePG_Thesis-
dc.identifier.hkulb5481905-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-

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