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Article: Reduction of Thermal Resistance and Optical Power Loss Using Thin-Film Light-Emitting Diode (LED) Structure

TitleReduction of Thermal Resistance and Optical Power Loss Using Thin-Film Light-Emitting Diode (LED) Structure
Authors
Issue Date2015
PublisherIEEE. The Journal's web site is located at http://www.ewh.ieee.org/soc/ies/ties/index.html
Citation
IEEE Transactions on Industrial Electronics, 2015 How to Cite?
AbstractIn this paper, a GaN-LED with sapphire structure and a thin-film LED without sapphire structure are characterized in the photo-electro-thermal (PET) modeling framework for comparison. Starting from the analysis and modeling of internal quantum efficiency as a function of current and temperature of blue LED, this work develops the thin-film LED device model and derives its optical power and the heat dissipation coefficient. The device parameters of the two LED devices with different structural designs are then compared. Practical optical power measurements are compared with theoretical predictions based on the two types of fabricated devices. It is shown that the thin-film LED device has much lower thermal resistance and optical power loss.
Persistent Identifierhttp://hdl.handle.net/10722/210730

 

DC FieldValueLanguage
dc.contributor.authorChen, H-
dc.contributor.authorCheung, YF-
dc.contributor.authorChoi, HW-
dc.contributor.authorTan, SC-
dc.contributor.authorHui, SYR-
dc.date.accessioned2015-06-23T05:48:44Z-
dc.date.available2015-06-23T05:48:44Z-
dc.date.issued2015-
dc.identifier.citationIEEE Transactions on Industrial Electronics, 2015-
dc.identifier.urihttp://hdl.handle.net/10722/210730-
dc.description.abstractIn this paper, a GaN-LED with sapphire structure and a thin-film LED without sapphire structure are characterized in the photo-electro-thermal (PET) modeling framework for comparison. Starting from the analysis and modeling of internal quantum efficiency as a function of current and temperature of blue LED, this work develops the thin-film LED device model and derives its optical power and the heat dissipation coefficient. The device parameters of the two LED devices with different structural designs are then compared. Practical optical power measurements are compared with theoretical predictions based on the two types of fabricated devices. It is shown that the thin-film LED device has much lower thermal resistance and optical power loss.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://www.ewh.ieee.org/soc/ies/ties/index.html-
dc.relation.ispartofIEEE Transactions on Industrial Electronics-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.titleReduction of Thermal Resistance and Optical Power Loss Using Thin-Film Light-Emitting Diode (LED) Structure-
dc.typeArticle-
dc.identifier.emailChen, H: htchen@eee.hku.hk-
dc.identifier.emailCheung, YF: yukfaira@hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailTan, SC: sctan@eee.hku.hk-
dc.identifier.emailHui, SYR: ronhui@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityHui, SYR=rp01510-
dc.identifier.authorityTan, SC=rp01606-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TIE.2015.2443106-
dc.identifier.hkuros244148-

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