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postgraduate thesis: MBE growth and characterization of GaN film

TitleMBE growth and characterization of GaN film
Authors
Issue Date1999
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Zhu, W. [朱文凱]. (1999). MBE growth and characterization of GaN film. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122217
DegreeMaster of Philosophy
SubjectGallium nitride
Molecular beam epitaxy
Dept/ProgramIndustrial and Manufacturing Systems Engineering
Persistent Identifierhttp://hdl.handle.net/10722/209586

 

DC FieldValueLanguage
dc.contributor.authorZhu, Wenkai-
dc.contributor.author朱文凱-
dc.date.accessioned2015-05-05T02:12:42Z-
dc.date.available2015-05-05T02:12:42Z-
dc.date.issued1999-
dc.identifier.citationZhu, W. [朱文凱]. (1999). MBE growth and characterization of GaN film. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122217-
dc.identifier.urihttp://hdl.handle.net/10722/209586-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subject.lcshGallium nitride-
dc.subject.lcshMolecular beam epitaxy-
dc.titleMBE growth and characterization of GaN film-
dc.typePG_Thesis-
dc.identifier.hkulb3122217-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplineIndustrial and Manufacturing Systems Engineering-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3122217-
dc.date.hkucongregation1999-

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