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Article: ZnO nanostructures for optoelectronics: Material properties and device applications

TitleZnO nanostructures for optoelectronics: Material properties and device applications
Authors
KeywordsZnO
Nanomaterials
LEDs
Photovoltaics
Issue Date2010
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/pqe
Citation
Progress in Quantum Electronics, 2010, v. 34 n. 4, p. 191-259 How to Cite?
AbstractIn recent years, there has been increasing interest in ZnO nanostructures due to their variety of morphologies and availability of simple and low cost processing. While there are still unanswered questions concerning fundamental properties of this material, in particular those related to defects and visible luminescence lines, great progress has been made in synthesis methods and device applications of ZnO nanostructures. In this review, we will provide a brief overview of synthesis methods of ZnO nanostructures, with particular focus on the growth of perpendicular arrays of nanorods/nanowires which are of interest for optoelectronic device applications. Then, we will provide an overview of material properties of ZnO nanostructures, issues related to doping with various elements to achieve either p- or n-type conductivity. Doping to alter optical or magnetic properties will also be discussed. Then, issues related to practical problems in achieving good electrical contacts to nanostructures will be presented. Finally, we will provide an overview of applications of ZnO nanostructures to light-emitting devices, photodetectors and solar cells.
Persistent Identifierhttp://hdl.handle.net/10722/207943
ISSN
2015 Impact Factor: 6.923
2015 SCImago Journal Rankings: 3.626

 

DC FieldValueLanguage
dc.contributor.authorDjurisic, AB-
dc.contributor.authorNg, AMC-
dc.contributor.authorChen, XY-
dc.date.accessioned2015-01-27T00:29:46Z-
dc.date.available2015-01-27T00:29:46Z-
dc.date.issued2010-
dc.identifier.citationProgress in Quantum Electronics, 2010, v. 34 n. 4, p. 191-259-
dc.identifier.issn0079-6727-
dc.identifier.urihttp://hdl.handle.net/10722/207943-
dc.description.abstractIn recent years, there has been increasing interest in ZnO nanostructures due to their variety of morphologies and availability of simple and low cost processing. While there are still unanswered questions concerning fundamental properties of this material, in particular those related to defects and visible luminescence lines, great progress has been made in synthesis methods and device applications of ZnO nanostructures. In this review, we will provide a brief overview of synthesis methods of ZnO nanostructures, with particular focus on the growth of perpendicular arrays of nanorods/nanowires which are of interest for optoelectronic device applications. Then, we will provide an overview of material properties of ZnO nanostructures, issues related to doping with various elements to achieve either p- or n-type conductivity. Doping to alter optical or magnetic properties will also be discussed. Then, issues related to practical problems in achieving good electrical contacts to nanostructures will be presented. Finally, we will provide an overview of applications of ZnO nanostructures to light-emitting devices, photodetectors and solar cells.-
dc.languageeng-
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/pqe-
dc.relation.ispartofProgress in Quantum Electronics-
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in [Journal title]. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in PUBLICATION, [VOL#, ISSUE#, (DATE)] DOI#-
dc.subjectZnO-
dc.subjectNanomaterials-
dc.subjectLEDs-
dc.subjectPhotovoltaics-
dc.titleZnO nanostructures for optoelectronics: Material properties and device applicationsen_US
dc.typeArticleen_US
dc.identifier.emailDjurisic, AB: dalek@hkusua.hku.hk-
dc.identifier.doi10.1016/j.pquantelec.2010.04.001-
dc.identifier.hkuros170667-
dc.identifier.volume34-
dc.identifier.issue4-
dc.identifier.spage191-
dc.identifier.epage259-
dc.publisher.placeUnited Kingdom-

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