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Article: Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates

TitleInfluences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates
Authors
Issue Date2007
PublisherIOP Science. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL
Citation
Chinese Physics Letters, 2007, v. 24:12, p. 3528-3531 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/207736

 

DC FieldValueLanguage
dc.contributor.authorKang, Len_US
dc.contributor.authorGao, Jen_US
dc.contributor.authorXU, Hen_US
dc.contributor.authorZhao, SQen_US
dc.contributor.authorChen, Hen_US
dc.contributor.authorWu, PHen_US
dc.date.accessioned2015-01-19T09:39:00Z-
dc.date.available2015-01-19T09:39:00Z-
dc.date.issued2007en_US
dc.identifier.citationChinese Physics Letters, 2007, v. 24:12, p. 3528-3531en_US
dc.identifier.urihttp://hdl.handle.net/10722/207736-
dc.languageengen_US
dc.publisherIOP Science. The Journal's web site is located at http://www.iop.org/EJ/journal/CPLen_US
dc.relation.ispartofChinese Physics Lettersen_US
dc.titleInfluences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substratesen_US
dc.typeArticleen_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.identifier.doi10.1088/0256-307X/24/12/065en_US
dc.identifier.hkuros242123en_US
dc.identifier.volume24:12en_US
dc.identifier.spage3528en_US
dc.identifier.epage3531en_US

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