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Article: Ballistic Transport in Monolayer Black Phosphorus Transistors

TitleBallistic Transport in Monolayer Black Phosphorus Transistors
Authors
Keywordsblack phosphorus (BP)
field-effect transistors (FETs)
Ballistic transport
Issue Date2014
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions On Electron Devices, 2014, v. 61 n. 11, p. 3871-3876 How to Cite?
Abstract© 2014 IEEE.We report a comprehensive theoretical investigation of ballistic quantum transport in monolayer black phosphorus (ML-BP) field-effect transistors (FETs). Our calculation is from tight binding atomistic model based on the nonequilibrium Green's function formalism. Several important device properties, including the drain current, ON-OFF ratio, transfer characteristic, short channel effects, intrinsic delay, and power delay product are determined against the channel length, transport direction, bias, and gate voltages. The atomistic simulation provides microscopic understanding of the device physics. Due to the anisotropic band structure of ML-BP, an orientation-dependent transport characteristic manifests itself in the major transistor properties. Comparing device performance in the zigzag and armchair direction (AD), we predict that transport along the AD has higher ON-state current and faster switching speed due to the lighter carrier effective mass. Comparing with ML MoS2 FET, ML-BP FET produces higher current density and faster switching speed, but costs more switching energy. Double gated ML-BP FETs show promising device characteristics that fulfill the international technology roadmap for semiconductors requirements in the 10-year horizon.
Persistent Identifierhttp://hdl.handle.net/10722/207294
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fen_US
dc.contributor.authorWang, YJen_US
dc.contributor.authorLiu, XYen_US
dc.contributor.authorWang, Jen_US
dc.contributor.authorGuo, Hen_US
dc.date.accessioned2014-12-19T09:59:19Z-
dc.date.available2014-12-19T09:59:19Z-
dc.date.issued2014en_US
dc.identifier.citationIEEE Transactions On Electron Devices, 2014, v. 61 n. 11, p. 3871-3876en_US
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/207294-
dc.description.abstract© 2014 IEEE.We report a comprehensive theoretical investigation of ballistic quantum transport in monolayer black phosphorus (ML-BP) field-effect transistors (FETs). Our calculation is from tight binding atomistic model based on the nonequilibrium Green's function formalism. Several important device properties, including the drain current, ON-OFF ratio, transfer characteristic, short channel effects, intrinsic delay, and power delay product are determined against the channel length, transport direction, bias, and gate voltages. The atomistic simulation provides microscopic understanding of the device physics. Due to the anisotropic band structure of ML-BP, an orientation-dependent transport characteristic manifests itself in the major transistor properties. Comparing device performance in the zigzag and armchair direction (AD), we predict that transport along the AD has higher ON-state current and faster switching speed due to the lighter carrier effective mass. Comparing with ML MoS2 FET, ML-BP FET produces higher current density and faster switching speed, but costs more switching energy. Double gated ML-BP FETs show promising device characteristics that fulfill the international technology roadmap for semiconductors requirements in the 10-year horizon.-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions On Electron Devicesen_US
dc.rightsIEEE Transactions On Electron Devices. Copyright © IEEE.en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2014 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectblack phosphorus (BP)-
dc.subjectfield-effect transistors (FETs)-
dc.subjectBallistic transport-
dc.titleBallistic Transport in Monolayer Black Phosphorus Transistorsen_US
dc.typeArticleen_US
dc.identifier.emailLiu, F: feiliu@hku.hken_US
dc.identifier.emailWang, J: jianwang@hku.hken_US
dc.identifier.authorityWang, J=rp00799en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TED.2014.2353213en_US
dc.identifier.scopuseid_2-s2.0-84908507727-
dc.identifier.hkuros241840en_US
dc.identifier.volume61en_US
dc.identifier.spage3871en_US
dc.identifier.epage3876en_US

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