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Article: An analytical model for the threshold voltage of a narrow-width MOSFET

TitleAn analytical model for the threshold voltage of a narrow-width MOSFET
Authors
Issue Date1984
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 1984, v. 31 n. 12, p. 1814-1823 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/205917
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCheng, YCen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-10-20T09:46:15Z-
dc.date.available2014-10-20T09:46:15Z-
dc.date.issued1984en_US
dc.identifier.citationIEEE Transactions on Electron Devices, 1984, v. 31 n. 12, p. 1814-1823en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/205917-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.rightsIEEE Transactions on Electron Devices. Copyright © IEEE.en_US
dc.rights©1984 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleAn analytical model for the threshold voltage of a narrow-width MOSFETen_US
dc.typeArticleen_US
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/T-ED.1984.21794en_US
dc.identifier.hkuros241277en_US
dc.identifier.volume31en_US
dc.identifier.issue12en_US
dc.identifier.spage1814en_US
dc.identifier.epage1823en_US
dc.identifier.isiWOS:A1984TV47100024-
dc.publisher.placeUnited Statesen_US

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