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Conference Paper: Latch-up characteristics of a trench-gate conductivity modulated power transistor

TitleLatch-up characteristics of a trench-gate conductivity modulated power transistor
Authors
Issue Date1995
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3573
Citation
IEEE Region 10th International Conference on Microelectronics and VLSI (TENCON '95), Hong Kong, China, 6-10 November 1995. In IEEE Region International Conference on Microelectronics and VLSI Proceedings, 1995, p. 424-427 How to Cite?
AbstractIn this paper, a new conductivity modulated power transistor, called the Lateral Trench-Gate Bipolar Transistor (LTGBT), is presented. The current at which the latch-up occurs in the structure is estimated in comparison with that of the LIGBT. The latch-up current density for the LTGBT exhibits more than 7.7 times improvement over the LIGBT. The dependence of the latch-up current density on the design of the n+ and p+ cathode regions of the structure is also examined. The maximum controllable latch-up current density is found to increase with decreasing the space between the trench gate and the p+ cathode.
DescriptionConference Theme: Asia-Pacific Microelectronics 2000
Persistent Identifierhttp://hdl.handle.net/10722/204149
ISBN
ISSN

 

DC FieldValueLanguage
dc.contributor.authorJun, Cen_US
dc.contributor.authorSin, JKOen_US
dc.contributor.authorNg, WTen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T20:06:51Z-
dc.date.available2014-09-19T20:06:51Z-
dc.date.issued1995en_US
dc.identifier.citationIEEE Region 10th International Conference on Microelectronics and VLSI (TENCON '95), Hong Kong, China, 6-10 November 1995. In IEEE Region International Conference on Microelectronics and VLSI Proceedings, 1995, p. 424-427en_US
dc.identifier.isbn9780780326248-
dc.identifier.issn0886-1420-
dc.identifier.urihttp://hdl.handle.net/10722/204149-
dc.descriptionConference Theme: Asia-Pacific Microelectronics 2000-
dc.description.abstractIn this paper, a new conductivity modulated power transistor, called the Lateral Trench-Gate Bipolar Transistor (LTGBT), is presented. The current at which the latch-up occurs in the structure is estimated in comparison with that of the LIGBT. The latch-up current density for the LTGBT exhibits more than 7.7 times improvement over the LIGBT. The dependence of the latch-up current density on the design of the n+ and p+ cathode regions of the structure is also examined. The maximum controllable latch-up current density is found to increase with decreasing the space between the trench gate and the p+ cathode.-
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3573-
dc.relation.ispartofIEEE Region International Conference on Microelectronics and VLSI Proceedingsen_US
dc.rightsIEEE Region International Conference on Microelectronics and VLSI Proceedings. Copyright © I E E E.-
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleLatch-up characteristics of a trench-gate conductivity modulated power transistoren_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TENCON.1995.496430-
dc.identifier.scopuseid_2-s2.0-0029534371-
dc.identifier.hkuros240620en_US
dc.identifier.hkuros12535-
dc.identifier.spage424en_US
dc.identifier.epage427en_US
dc.publisher.placeUnited States-

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