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Conference Paper: Single whispering-gallery mode lasing from free-standing microdisk with InGaN/GaN quantum wells
| Title | Single whispering-gallery mode lasing from free-standing microdisk with InGaN/GaN quantum wells |
|---|---|
| Authors | |
| Issue Date | 2014 |
| Publisher | Compound Semiconductors Week 2014. |
| Citation | Compound Semiconductors Week 2014: The 41st International Symposium on Compound Semiconductors (ISCS 2014) and 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), Montpellier, France, 11-15 May 2014. In Program Book, 2014, p. 55 How to Cite? |
| Abstract | Room‐temperature single whispering‐gallery mode (WGM) lasing has been observed in optically‐pumped free‐standing InGaN/GaN quantum well microdisks at room temperature. The 1‐μm microdisks are patterned by microsphere lithography on free‐standing (FS)GaN thin‐films prepared by laser removal of the sapphire substrate. Single‐mode WGM lasing centered at 430.3 nm has been observed from the FS microdisk with a quality factor (Q) of 500 and at a threshold of 7.10 mJ/cm2. Second‐order WGM is responsible for the lasing, according to finite‐difference time‐domain (FDTD) simulations. |
| Description | Session - ISCS: In‐based nitride materials & devices: no. Tu‐C3‐7 The Conference program's website is located at http://csw2014.org/documents/program/140428_CSWEEK%202014-book.pdf |
| Persistent Identifier | http://hdl.handle.net/10722/204046 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, HW | en_US |
| dc.contributor.author | Zhang, X | en_US |
| dc.date.accessioned | 2014-09-19T20:02:02Z | - |
| dc.date.available | 2014-09-19T20:02:02Z | - |
| dc.date.issued | 2014 | en_US |
| dc.identifier.citation | Compound Semiconductors Week 2014: The 41st International Symposium on Compound Semiconductors (ISCS 2014) and 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), Montpellier, France, 11-15 May 2014. In Program Book, 2014, p. 55 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10722/204046 | - |
| dc.description | Session - ISCS: In‐based nitride materials & devices: no. Tu‐C3‐7 | - |
| dc.description | The Conference program's website is located at http://csw2014.org/documents/program/140428_CSWEEK%202014-book.pdf | - |
| dc.description.abstract | Room‐temperature single whispering‐gallery mode (WGM) lasing has been observed in optically‐pumped free‐standing InGaN/GaN quantum well microdisks at room temperature. The 1‐μm microdisks are patterned by microsphere lithography on free‐standing (FS)GaN thin‐films prepared by laser removal of the sapphire substrate. Single‐mode WGM lasing centered at 430.3 nm has been observed from the FS microdisk with a quality factor (Q) of 500 and at a threshold of 7.10 mJ/cm2. Second‐order WGM is responsible for the lasing, according to finite‐difference time‐domain (FDTD) simulations. | - |
| dc.language | eng | en_US |
| dc.publisher | Compound Semiconductors Week 2014. | - |
| dc.relation.ispartof | Compound Semiconductors Week, CSW2014 Program Book | en_US |
| dc.title | Single whispering-gallery mode lasing from free-standing microdisk with InGaN/GaN quantum wells | en_US |
| dc.type | Conference_Paper | en_US |
| dc.identifier.email | Choi, HW: hwchoi@hku.hk | en_US |
| dc.identifier.authority | Choi, HW=rp00108 | en_US |
| dc.identifier.hkuros | 236799 | en_US |
| dc.identifier.spage | 55 | - |
| dc.identifier.epage | 55 | - |