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Article: Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

TitleFluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric
Authors
Issue Date2014
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
IEEE Electron Device Letters, 2014, vol. 35 n. 3, p. 363-365 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/202928

 

DC FieldValueLanguage
dc.contributor.authorQIAN, Len_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T10:10:39Z-
dc.date.available2014-09-19T10:10:39Z-
dc.date.issued2014en_US
dc.identifier.citationIEEE Electron Device Letters, 2014, vol. 35 n. 3, p. 363-365en_US
dc.identifier.urihttp://hdl.handle.net/10722/202928-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55-
dc.relation.ispartofIEEE Electron Device Lettersen_US
dc.titleFluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectricen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2013.2296895-
dc.identifier.hkuros240549en_US
dc.identifier.volume35en_US
dc.identifier.spage363en_US
dc.identifier.epage365en_US

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