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Article: Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

TitleFluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric
Authors
Issue Date2014
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
IEEE Electron Device Letters, 2014, vol. 35 n. 3, p. 363-365 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/202928

 

DC FieldValueLanguage
dc.contributor.authorQIAN, Len_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T10:10:39Z-
dc.date.available2014-09-19T10:10:39Z-
dc.date.issued2014en_US
dc.identifier.citationIEEE Electron Device Letters, 2014, vol. 35 n. 3, p. 363-365en_US
dc.identifier.urihttp://hdl.handle.net/10722/202928-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55-
dc.relation.ispartofIEEE Electron Device Lettersen_US
dc.rightsIEEE Electron Device Letters. Copyright © IEEE-
dc.rights©2014 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleFluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectricen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.hkuros240549en_US
dc.identifier.volume35en_US
dc.identifier.spage363en_US
dc.identifier.epage365en_US

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