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Article: Mo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance

TitleMo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance
Authors
Issue Date2013
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ssl.ecsdl.org/
Citation
ECS Solid State Letters , 2013, v. 2 n. 11, p. Q87-Q89 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/202919
ISSN
2015 Impact Factor: 1.142
2015 SCImago Journal Rankings: 0.559
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTao, QBen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T10:09:57Z-
dc.date.available2014-09-19T10:09:57Z-
dc.date.issued2013en_US
dc.identifier.citationECS Solid State Letters , 2013, v. 2 n. 11, p. Q87-Q89en_US
dc.identifier.issn2162-8742-
dc.identifier.urihttp://hdl.handle.net/10722/202919-
dc.languageengen_US
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ssl.ecsdl.org/-
dc.relation.ispartofECS Solid State Lettersen_US
dc.rightsECS Solid State Letters . Copyright © Electrochemical Society Inc.-
dc.rights© The Electrochemical Society, Inc. 2013. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Solid State Letters , 2013, v. 2 n. 11, p. Q87-Q89-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleMo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performanceen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepostprint-
dc.identifier.doi10.1149/2.006311ssl-
dc.identifier.scopuseid_2-s2.0-84888368614-
dc.identifier.hkuros240499en_US
dc.identifier.volume2en_US
dc.identifier.issue11-
dc.identifier.spageQ87en_US
dc.identifier.epageQ89en_US
dc.identifier.isiWOS:000324582600011-
dc.publisher.placeUnited States-

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