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Article: Improved Performance of InGaZnO Thin-Film Transistor with HfLaO Gate Dielectric Annealed in Oxygen

TitleImproved Performance of InGaZnO Thin-Film Transistor with HfLaO Gate Dielectric Annealed in Oxygen
Authors
Issue Date2014
Citation
IEEE Transactions on Device and Materials Reliability, 2014, vol.14, p. pp177-181 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/202915

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorQIAN, Len_US
dc.date.accessioned2014-09-19T10:09:54Z-
dc.date.available2014-09-19T10:09:54Z-
dc.date.issued2014en_US
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2014, vol.14, p. pp177-181en_US
dc.identifier.urihttp://hdl.handle.net/10722/202915-
dc.languageengen_US
dc.relation.ispartofIEEE Transactions on Device and Materials Reliabilityen_US
dc.titleImproved Performance of InGaZnO Thin-Film Transistor with HfLaO Gate Dielectric Annealed in Oxygenen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.hkuros240492en_US
dc.identifier.volumevol.14en_US
dc.identifier.spagepp177en_US
dc.identifier.epage181en_US

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