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Article: Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells

TitleSchottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells
Authors
Issue Date2014
PublisherAmerican Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/
Citation
Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics, 2014, v. 32 n. 1, article no. 011212 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/202846
ISSN
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, Gen_US
dc.contributor.authorChoi, AHWen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorTang, WMen_US
dc.date.accessioned2014-09-19T10:08:14Z-
dc.date.available2014-09-19T10:08:14Z-
dc.date.issued2014en_US
dc.identifier.citationJournal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics, 2014, v. 32 n. 1, article no. 011212en_US
dc.identifier.issn2166-2746-
dc.identifier.urihttp://hdl.handle.net/10722/202846-
dc.languageengen_US
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/-
dc.relation.ispartofJournal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronicsen_US
dc.rightsCopyright 2014 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. along with the following message: The following article appeared in Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics, 2014, v. 32 n. 1, article no. 011212 and may be found at http://scitation.aip.org/content/avs/journal/jvstb/32/1/10.1116/1.4855057-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleSchottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wellsen_US
dc.typeArticleen_US
dc.identifier.emailChoi, AHW: hwchoi@eee.hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityChoi, AHW=rp00108en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1116/1.4855057-
dc.identifier.scopuseid_2-s2.0-84893216025-
dc.identifier.hkuros236765en_US
dc.identifier.hkuros240526-
dc.identifier.volume32en_US
dc.identifier.issue1-
dc.identifier.isiWOS:000330774300015-
dc.publisher.placeUnited States-

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