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Conference Paper: Magnetoelectric effects and valley dependent spin resonances in transition metal dichalcogenide bilayers

TitleMagnetoelectric effects and valley dependent spin resonances in transition metal dichalcogenide bilayers
Authors
Issue Date2014
PublisherAmerican Physical Society. The Journal's web site is located at http://www.aps.org/memb/guide/prbook-baps.cfm
Citation
American Physical Society (APS) March Meeting, Denver, Colorado, USA, 3-7 March 2014. In American Physical Society Bulletin, 2014, v. 59 n. 1, p. abstract no. J51.00005 How to Cite?
AbstractIn addition to spin, valley is an internal degrees of freedom of carriers in monolayer group-VI transition metal dichalcogenides (TMDCs). In bilayer, carrier is also characterized by the layer pseudospin, which is associated with the electrical polarization. Here we show in TMDC bilayers, the spin, valley and layer pseudospins of carriers are strongly coupled to each other. Because of this coupling, most of the spin physics in TMDC monolayer such as the spin Hall effect and spin-dependent selection rule for optical transitions are inherited in TMDC bilayers. The strong coupling between spin and layer pseudospin also gives rise to a variety of magnetoelectric effects that make possible quantum manipulation of these electronic degrees of freedom. For example, electric polarization will oscillate in a magnetic field, while electric field can be used to tune the spin precessions. Moreover, the coupling between spin, valley and layer pseudospins makes possible valley dependent spin resonances such that spin rotations can be selectively addressed in the two valleys.
DescriptionSession J51 DMP: Focus Session: Beyond Graphene Devices: Function, Fabrication, and Characterization II
Persistent Identifierhttp://hdl.handle.net/10722/201409
ISSN

 

DC FieldValueLanguage
dc.contributor.authorGong, Zen_US
dc.contributor.authorLiu, Gen_US
dc.contributor.authorYu, Hen_US
dc.contributor.authorXiao, Den_US
dc.contributor.authorCui, Xen_US
dc.contributor.authorXu, XDen_US
dc.contributor.authorYao, Wen_US
dc.date.accessioned2014-08-21T07:26:39Z-
dc.date.available2014-08-21T07:26:39Z-
dc.date.issued2014en_US
dc.identifier.citationAmerican Physical Society (APS) March Meeting, Denver, Colorado, USA, 3-7 March 2014. In American Physical Society Bulletin, 2014, v. 59 n. 1, p. abstract no. J51.00005en_US
dc.identifier.issn0003-0503-
dc.identifier.urihttp://hdl.handle.net/10722/201409-
dc.descriptionSession J51 DMP: Focus Session: Beyond Graphene Devices: Function, Fabrication, and Characterization II-
dc.description.abstractIn addition to spin, valley is an internal degrees of freedom of carriers in monolayer group-VI transition metal dichalcogenides (TMDCs). In bilayer, carrier is also characterized by the layer pseudospin, which is associated with the electrical polarization. Here we show in TMDC bilayers, the spin, valley and layer pseudospins of carriers are strongly coupled to each other. Because of this coupling, most of the spin physics in TMDC monolayer such as the spin Hall effect and spin-dependent selection rule for optical transitions are inherited in TMDC bilayers. The strong coupling between spin and layer pseudospin also gives rise to a variety of magnetoelectric effects that make possible quantum manipulation of these electronic degrees of freedom. For example, electric polarization will oscillate in a magnetic field, while electric field can be used to tune the spin precessions. Moreover, the coupling between spin, valley and layer pseudospins makes possible valley dependent spin resonances such that spin rotations can be selectively addressed in the two valleys.-
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://www.aps.org/memb/guide/prbook-baps.cfm-
dc.relation.ispartofAmerican Physical Society Bulletinen_US
dc.rightsAmerican Physical Society Bulletin. Copyright © American Physical Society.-
dc.titleMagnetoelectric effects and valley dependent spin resonances in transition metal dichalcogenide bilayersen_US
dc.typeConference_Paperen_US
dc.identifier.emailGong, Z: gongzr@hku.hken_US
dc.identifier.emailLiu, G: gbliu@hku.hken_US
dc.identifier.emailYu, H: yuhongyi@hku.hken_US
dc.identifier.emailCui, X: xdcui@hku.hken_US
dc.identifier.emailYao, W: wangyao@hku.hken_US
dc.identifier.authorityCui, X=rp00689en_US
dc.identifier.authorityYao, W=rp00827en_US
dc.identifier.hkuros234274en_US
dc.identifier.volume59-
dc.identifier.issue1-
dc.publisher.placeUnited States-

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