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Conference Paper: Joint optimization of source, mask, and pupil in optical lithography

TitleJoint optimization of source, mask, and pupil in optical lithography
Authors
KeywordsComputational lithography
Mask topography effects
Source mask optimization
Spherical aberration
Usable depth of focus
Issue Date2014
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2
Citation
Conference 9052 - The 27th Optical Microlithography (OM) Conference, San Jose, California, USA , 25-27 February 2014. In Proceedings of SPIE, 2014, v. 9052 , p. article no. 90520S How to Cite?
AbstractMask topography effects need to be taken into consideration for more advanced resolution enhancement techniques in optical lithography. However, rigorous 3D mask model achieves high accuracy at a large computational cost. This work develops a combined source, mask and pupil optimization (SMPO) approach by taking advantage of the fact that pupil phase manipulation is capable of partially compensating for mask topography effects. We first design the pupil wavefront function by incorporating primary and secondary spherical aberration through the coefficients of the Zernike polynomials, and achieve optimal source-mask pair under the condition of aberrated pupil. Evaluations against conventional source mask optimization (SMO) without incorporating pupil aberrations show that SMPO provides improved performance in terms of pattern fidelity and process window sizes.
Persistent Identifierhttp://hdl.handle.net/10722/201228
ISBN
ISSN
2020 SCImago Journal Rankings: 0.192
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, Jen_US
dc.contributor.authorLam, EYMen_US
dc.date.accessioned2014-08-21T07:18:17Z-
dc.date.available2014-08-21T07:18:17Z-
dc.date.issued2014en_US
dc.identifier.citationConference 9052 - The 27th Optical Microlithography (OM) Conference, San Jose, California, USA , 25-27 February 2014. In Proceedings of SPIE, 2014, v. 9052 , p. article no. 90520Sen_US
dc.identifier.isbn9780819499752-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/201228-
dc.description.abstractMask topography effects need to be taken into consideration for more advanced resolution enhancement techniques in optical lithography. However, rigorous 3D mask model achieves high accuracy at a large computational cost. This work develops a combined source, mask and pupil optimization (SMPO) approach by taking advantage of the fact that pupil phase manipulation is capable of partially compensating for mask topography effects. We first design the pupil wavefront function by incorporating primary and secondary spherical aberration through the coefficients of the Zernike polynomials, and achieve optimal source-mask pair under the condition of aberrated pupil. Evaluations against conventional source mask optimization (SMO) without incorporating pupil aberrations show that SMPO provides improved performance in terms of pattern fidelity and process window sizes.-
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2-
dc.relation.ispartofProceedings of SPIE - International Society for Optical Engineeringen_US
dc.rightsCopyright 2014 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.2045739-
dc.subjectComputational lithography-
dc.subjectMask topography effects-
dc.subjectSource mask optimization-
dc.subjectSpherical aberration-
dc.subjectUsable depth of focus-
dc.titleJoint optimization of source, mask, and pupil in optical lithographyen_US
dc.typeConference_Paperen_US
dc.identifier.emailLam, EYM: elam@eee.hku.hken_US
dc.identifier.authorityLam, EYM=rp00131en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1117/12.2045739-
dc.identifier.scopuseid_2-s2.0-84901745687-
dc.identifier.hkuros233697en_US
dc.identifier.volume9052-
dc.identifier.spagearticle no. 90520S-
dc.identifier.epagearticle no. 90520S-
dc.identifier.isiWOS:000337142800023-
dc.publisher.placeUnited States-
dc.identifier.issnl0277-786X-

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