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Article: Localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells

TitleLocalized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells
Authors
Xu, DHGao, JLiu, CXSun, JHZhang, FZhou, Y
Issue Date2014
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2014, v. 89 n. 19, article no. 195104 , p. 1-7 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.89.195104
Persistent Identifierhttp://hdl.handle.net/10722/200801
ISSN
1098-0121
2014 Impact Factor: 3.736
ISI Accession Number ID
WOS:000335560500001

 

DC FieldValueLanguage
dc.contributor.authorXu, DHen_US
dc.contributor.authorGao, Jen_US
dc.contributor.authorLiu, CXen_US
dc.contributor.authorSun, JHen_US
dc.contributor.authorZhang, Fen_US
dc.contributor.authorZhou, Yen_US
dc.date.accessioned2014-08-21T07:01:44Z-
dc.date.available2014-08-21T07:01:44Z-
dc.date.issued2014en_US
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2014, v. 89 n. 19, article no. 195104 , p. 1-7-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10722/200801-
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)en_US
dc.rightsCopyright 2014 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.89.195104-
dc.titleLocalized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wellsen_US
dc.typeArticleen_US
dc.identifier.emailXu, DH: dhxu@hku.hken_US
dc.identifier.emailGao, J: jhgao@hku.hken_US
dc.identifier.emailZhang, F: fuchun@hkucc.hku.hken_US
dc.identifier.emailZhou, Y: yizhou76@hku.hken_US
dc.identifier.authorityGao, J=rp00698en_US
dc.identifier.authorityZhang, F=rp00840en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.89.195104en_US
dc.identifier.scopuseid_2-s2.0-84900560594-
dc.identifier.hkuros234141en_US
dc.identifier.volume89en_US
dc.identifier.issue19-
dc.identifier.spagearticle no. 195104, p. 1-
dc.identifier.epagearticle no. 195104, p. 7-
dc.identifier.isiWOS:000335560500001-
dc.publisher.placeNew Yorken_US
dc.identifier.issnl1098-0121-

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