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Article: A degradable polycyclic cross-linker for UV-curing nanoimprint lithography

TitleA degradable polycyclic cross-linker for UV-curing nanoimprint lithography
Authors
Issue Date2014
Citation
Journal of Materials Chemistry C, 2014, v. 2 n. 10, p. 1836-1843 How to Cite?
AbstractIn this paper, we design and synthesize a degradable polycyclic diacrylate cross-linker, 2,10-diacryloyloxymethyl- 1,4,9,12-tetraoxaspiro[4.2.4.2] tetradecane (DAMTT), from easily available starting materials by bis-ketalization of 1,4-cyclohexanedione with glycerol, followed by esterification with acryloyl choride. The chemical structure of the degradable cross-linker is characterized by FTIR, H-1 NMR and GC-MS. A UV-NIL resist based on DAMTT has a very low shrinkage (about 2.5%) and a high Young's modulus of 1.89 GPa after UV-curing, and is soluble in acidic media. Patterns with sub-10 nm resolution are faithfully imprinted into the DAMTT film. The degradable cross-linker is incorporated with a multifunctional acrylated siloxane to increase O-2 RIE resistance as an etch barrier for high aspect ratio pattern transfer. The cross-linked film of the UV-curable resist remains soluble in acidic media even though its formulation contains acrylated siloxane up to 50% (w/w). Moreover, in contrast to most UV-NIL resists which are insoluble in solvents after curing, the DAMTT resist can independently achieve a lift-off process without the assistance of a thermoplastic polymer layer. That makes it possible to fabricate metal nanostructures on highly curved surfaces via a hybrid UV-curing nanoimprint technique. For example, metal gratings are successfully fabricated on the cylindrical surface of an optical fiber via a lift-off process.
Persistent Identifierhttp://hdl.handle.net/10722/200679
ISSN
2015 Impact Factor: 5.066
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHu, Xen_US
dc.contributor.authorYang, Ten_US
dc.contributor.authorGu, RHen_US
dc.contributor.authorCui, YSen_US
dc.contributor.authorYuan, CSen_US
dc.contributor.authorGe, HXen_US
dc.contributor.authorWu, Wen_US
dc.contributor.authorLi, Wen_US
dc.contributor.authorChen, YFen_US
dc.date.accessioned2014-08-21T06:54:20Z-
dc.date.available2014-08-21T06:54:20Z-
dc.date.issued2014en_US
dc.identifier.citationJournal of Materials Chemistry C, 2014, v. 2 n. 10, p. 1836-1843en_US
dc.identifier.issn2050-7526en_US
dc.identifier.urihttp://hdl.handle.net/10722/200679-
dc.description.abstractIn this paper, we design and synthesize a degradable polycyclic diacrylate cross-linker, 2,10-diacryloyloxymethyl- 1,4,9,12-tetraoxaspiro[4.2.4.2] tetradecane (DAMTT), from easily available starting materials by bis-ketalization of 1,4-cyclohexanedione with glycerol, followed by esterification with acryloyl choride. The chemical structure of the degradable cross-linker is characterized by FTIR, H-1 NMR and GC-MS. A UV-NIL resist based on DAMTT has a very low shrinkage (about 2.5%) and a high Young's modulus of 1.89 GPa after UV-curing, and is soluble in acidic media. Patterns with sub-10 nm resolution are faithfully imprinted into the DAMTT film. The degradable cross-linker is incorporated with a multifunctional acrylated siloxane to increase O-2 RIE resistance as an etch barrier for high aspect ratio pattern transfer. The cross-linked film of the UV-curable resist remains soluble in acidic media even though its formulation contains acrylated siloxane up to 50% (w/w). Moreover, in contrast to most UV-NIL resists which are insoluble in solvents after curing, the DAMTT resist can independently achieve a lift-off process without the assistance of a thermoplastic polymer layer. That makes it possible to fabricate metal nanostructures on highly curved surfaces via a hybrid UV-curing nanoimprint technique. For example, metal gratings are successfully fabricated on the cylindrical surface of an optical fiber via a lift-off process.en_US
dc.languageengen_US
dc.relation.ispartofJournal of Materials Chemistry Cen_US
dc.titleA degradable polycyclic cross-linker for UV-curing nanoimprint lithographyen_US
dc.typeArticleen_US
dc.identifier.emailLi, W: liwd@hku.hken_US
dc.identifier.authorityLi, W=rp01581en_US
dc.identifier.doi10.1039/c3tc32048ken_US
dc.identifier.hkuros234708en_US
dc.identifier.volume2en_US
dc.identifier.issue10en_US
dc.identifier.spage1836en_US
dc.identifier.epage1843en_US
dc.identifier.isiWOS:000332027800010-

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