Towards a cleaner surrounding for electron spin qubit in III‐V semiconductors

Abstract

A single electron spin localized in III‐V semiconductor structure is an attractive candidate for a solid state quantum bit. An outstanding bottleneck towards spinbased quantum computation has been the fast dephasing of the electron spin by the inevitable nuclear spin environment. In this talk, I will discuss preparations of nuclear spin environment using optical and electrical controlled dynamic nuclear spin polarization to substantially increase the electron spin dephasing time [1,2]. I will also introduce a novel approach to squeeze the nuclear spin bath into manybody singlets, where the deleterious environmental moments are effectively annihilated. The large scale entanglement in many‐body singlets may also become a useful resource for nuclear spin based information processing.