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Article: First Principles simulations of nanoscale silicon devices with uniaxial strain

TitleFirst Principles simulations of nanoscale silicon devices with uniaxial strain
Authors
Zhang, LNZahid, FZhu, YLiu, LWang, JGuo, HChan, PCHChan, MS
KeywordsDensity functional theory (DFT)
first principles
nanoscale devices
nonequilibrium Green's function (NEGF)
quantum transport
uniaxial strain
Issue Date2013
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2013, v. 60 n. 10, p. 3527-3533 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2013.2275231
Persistent Identifierhttp://hdl.handle.net/10722/193905
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:000324928900078

 

DC FieldValueLanguage
dc.contributor.authorZhang, LNen_US
dc.contributor.authorZahid, Fen_US
dc.contributor.authorZhu, Yen_US
dc.contributor.authorLiu, Len_US
dc.contributor.authorWang, Jen_US
dc.contributor.authorGuo, Hen_US
dc.contributor.authorChan, PCHen_US
dc.contributor.authorChan, MSen_US
dc.date.accessioned2014-01-28T06:32:07Z-
dc.date.available2014-01-28T06:32:07Z-
dc.date.issued2013en_US
dc.identifier.citationIEEE Transactions on Electron Devices, 2013, v. 60 n. 10, p. 3527-3533en_US
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/193905-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.subjectDensity functional theory (DFT)-
dc.subjectfirst principles-
dc.subjectnanoscale devices-
dc.subjectnonequilibrium Green's function (NEGF)-
dc.subjectquantum transport-
dc.subjectuniaxial strain-
dc.titleFirst Principles simulations of nanoscale silicon devices with uniaxial strainen_US
dc.typeArticleen_US
dc.identifier.emailZahid, F: fzahid@hku.hken_US
dc.identifier.emailWang, J: jianwang@hku.hken_US
dc.identifier.emailGuo, H: guohku@hku.hken_US
dc.identifier.authorityZahid, F=rp01472en_US
dc.identifier.authorityWang, J=rp00799en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2013.2275231en_US
dc.identifier.scopuseid_2-s2.0-84884820766-
dc.identifier.hkuros227477en_US
dc.identifier.volume60en_US
dc.identifier.issue10-
dc.identifier.spage3527en_US
dc.identifier.epage3533en_US
dc.identifier.isiWOS:000324928900078-
dc.publisher.placeUnited States-
dc.identifier.issnl0018-9383-

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