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Article: Electronic structure of III-V zinc-blende semiconductors from first principles

TitleElectronic structure of III-V zinc-blende semiconductors from first principles
Authors
Issue Date2013
PublisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prb/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2013, v. 87 n. 23, article no. 235203 How to Cite?
AbstractFor analyzing quantum transport in semiconductor devices, accurate electronic structures are critical for quantitative predictions. Here we report theoretical analysis of electronic structures of all III-V zinc-blende semiconductor compounds. Our calculations are from density functional theory with the semilocal exchange proposed recently, within the linear muffin tin orbital scheme. The calculated band gaps and effective masses are compared to experimental data and good quantitative agreement is obtained. Using the theoretical scheme presented here, quantum transport in nanostructures of III-V compounds can be confidently predicted. © 2013 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/192651
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, Yen_US
dc.contributor.authorYin, Hen_US
dc.contributor.authorCao, Ren_US
dc.contributor.authorZahid, Fen_US
dc.contributor.authorZhu, Yen_US
dc.contributor.authorLiu, Len_US
dc.contributor.authorWang, Jen_US
dc.contributor.authorGuo, Hen_US
dc.date.accessioned2013-11-20T04:54:19Z-
dc.date.available2013-11-20T04:54:19Z-
dc.date.issued2013en_US
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2013, v. 87 n. 23, article no. 235203-
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://hdl.handle.net/10722/192651-
dc.description.abstractFor analyzing quantum transport in semiconductor devices, accurate electronic structures are critical for quantitative predictions. Here we report theoretical analysis of electronic structures of all III-V zinc-blende semiconductor compounds. Our calculations are from density functional theory with the semilocal exchange proposed recently, within the linear muffin tin orbital scheme. The calculated band gaps and effective masses are compared to experimental data and good quantitative agreement is obtained. Using the theoretical scheme presented here, quantum transport in nanostructures of III-V compounds can be confidently predicted. © 2013 American Physical Society.en_US
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prb/-
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)-
dc.rightsCopyright 2013 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.87.235203-
dc.titleElectronic structure of III-V zinc-blende semiconductors from first principlesen_US
dc.typeArticleen_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.87.235203en_US
dc.identifier.scopuseid_2-s2.0-84879019287en_US
dc.identifier.hkuros216107-
dc.identifier.volume87en_US
dc.identifier.issue23en_US
dc.identifier.spagearticle no. 235203-
dc.identifier.epagearticle no. 235203-
dc.identifier.isiWOS:000320164900003-

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