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Conference Paper: Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications

TitleImproved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications
Authors
Huang, XLai, PT
KeywordsFlash memory
Charge-trapping layer
Hf-doped BaTi03
Issue Date2013
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2013.6628237
AbstractBaTi03 with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTi03 CTL, the one with Hf-doped BaTi03 shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTi03• Therefore, the Hf-doped BaTi03 is a promising candidate as CTL for flash memory application.
Persistent Identifierhttp://hdl.handle.net/10722/191663
ISBN
978-1-4673-2523-3

 

DC FieldValueLanguage
dc.contributor.authorHuang, Xen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T07:14:58Z-
dc.date.available2013-10-15T07:14:58Z-
dc.date.issued2013en_US
dc.identifier.citationThe 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2en_US
dc.identifier.isbn978-1-4673-2523-3-
dc.identifier.urihttp://hdl.handle.net/10722/191663-
dc.description.abstractBaTi03 with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTi03 CTL, the one with Hf-doped BaTi03 shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTi03• Therefore, the Hf-doped BaTi03 is a promising candidate as CTL for flash memory application.-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits Proceedingsen_US
dc.subjectFlash memory-
dc.subjectCharge-trapping layer-
dc.subjectHf-doped BaTi03-
dc.titleImproved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applicationsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/EDSSC.2013.6628237-
dc.identifier.scopuseid_2-s2.0-84890536400-
dc.identifier.hkuros226079en_US
dc.identifier.spage1-
dc.identifier.epage2-
dc.publisher.placeUnited Statesen_US
dc.customcontrol.immutablesml 131108-

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