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- Publisher Website: 10.1109/EDSSC.2012.6482795
- Scopus: eid_2-s2.0-84875695400
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Conference Paper: HfON/LaON as charge-trapping layer for nonvolatile memory applications
| Title | HfON/LaON as charge-trapping layer for nonvolatile memory applications |
|---|---|
| Authors | |
| Keywords | Charge-trapping HfLaON Nonvolatile memory |
| Issue Date | 2012 |
| Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 |
| Citation | The 8th IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2012), Bangkok, Thailand, 3-5 December 2012. In Conference Proceedings, 2012, p. 1-3 How to Cite? |
| Abstract | The charge-trapping characteristics of HfON/LaON composite film (denoted as HfLaON) were investigated based on an Al/Al2O3/HfLaON/ SiO2/Si (MONOS) capacitor. The physical properties of the high-k film were analyzed by transmission electron microscopy and electron diffraction spectroscopy. Compared with another MONOS capacitor with nitrided La 2O3 as charge-trapping layer, the one with HfLaON showed better memory characteristics in terms of larger memory window, higher program speed (6.3 V at +14 V for 100 μs), and smaller charge loss (8.2% after 104 sec), due to the HfLaON composite film exhibiting an amorphous structure and the suppressed formation of an interlayer at the HfLaON/SiO 2 interface. © 2012 IEEE. |
| Persistent Identifier | http://hdl.handle.net/10722/191646 |
| ISBN |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Huang, X | en_US |
| dc.contributor.author | Lai, PT | en_US |
| dc.date.accessioned | 2013-10-15T07:14:51Z | - |
| dc.date.available | 2013-10-15T07:14:51Z | - |
| dc.date.issued | 2012 | en_US |
| dc.identifier.citation | The 8th IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2012), Bangkok, Thailand, 3-5 December 2012. In Conference Proceedings, 2012, p. 1-3 | en_US |
| dc.identifier.isbn | 978-1-4673-5696-1 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/191646 | - |
| dc.description.abstract | The charge-trapping characteristics of HfON/LaON composite film (denoted as HfLaON) were investigated based on an Al/Al2O3/HfLaON/ SiO2/Si (MONOS) capacitor. The physical properties of the high-k film were analyzed by transmission electron microscopy and electron diffraction spectroscopy. Compared with another MONOS capacitor with nitrided La 2O3 as charge-trapping layer, the one with HfLaON showed better memory characteristics in terms of larger memory window, higher program speed (6.3 V at +14 V for 100 μs), and smaller charge loss (8.2% after 104 sec), due to the HfLaON composite film exhibiting an amorphous structure and the suppressed formation of an interlayer at the HfLaON/SiO 2 interface. © 2012 IEEE. | - |
| dc.language | eng | en_US |
| dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 | - |
| dc.relation.ispartof | IEEE Conference on Electron Devices and Solid-State Circuits Proceedings | en_US |
| dc.subject | Charge-trapping | - |
| dc.subject | HfLaON | - |
| dc.subject | Nonvolatile memory | - |
| dc.title | HfON/LaON as charge-trapping layer for nonvolatile memory applications | en_US |
| dc.type | Conference_Paper | en_US |
| dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_US |
| dc.identifier.authority | Lai, PT=rp00130 | en_US |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1109/EDSSC.2012.6482795 | - |
| dc.identifier.scopus | eid_2-s2.0-84875695400 | - |
| dc.identifier.hkuros | 226029 | en_US |
| dc.identifier.spage | 1 | - |
| dc.identifier.epage | 3 | - |
| dc.publisher.place | United States | en_US |
| dc.customcontrol.immutable | sml 131107 | - |