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Conference Paper: HfON/LaON as charge-trapping layer for nonvolatile memory applications

TitleHfON/LaON as charge-trapping layer for nonvolatile memory applications
Authors
KeywordsCharge-trapping
HfLaON
Nonvolatile memory
Issue Date2012
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 8th IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2012), Bangkok, Thailand, 3-5 December 2012. In Conference Proceedings, 2012, p. 1-3 How to Cite?
AbstractThe charge-trapping characteristics of HfON/LaON composite film (denoted as HfLaON) were investigated based on an Al/Al2O3/HfLaON/ SiO2/Si (MONOS) capacitor. The physical properties of the high-k film were analyzed by transmission electron microscopy and electron diffraction spectroscopy. Compared with another MONOS capacitor with nitrided La 2O3 as charge-trapping layer, the one with HfLaON showed better memory characteristics in terms of larger memory window, higher program speed (6.3 V at +14 V for 100 μs), and smaller charge loss (8.2% after 104 sec), due to the HfLaON composite film exhibiting an amorphous structure and the suppressed formation of an interlayer at the HfLaON/SiO 2 interface. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/191646
ISBN

 

DC FieldValueLanguage
dc.contributor.authorHuang, Xen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T07:14:51Z-
dc.date.available2013-10-15T07:14:51Z-
dc.date.issued2012en_US
dc.identifier.citationThe 8th IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2012), Bangkok, Thailand, 3-5 December 2012. In Conference Proceedings, 2012, p. 1-3en_US
dc.identifier.isbn978-1-4673-5696-1-
dc.identifier.urihttp://hdl.handle.net/10722/191646-
dc.description.abstractThe charge-trapping characteristics of HfON/LaON composite film (denoted as HfLaON) were investigated based on an Al/Al2O3/HfLaON/ SiO2/Si (MONOS) capacitor. The physical properties of the high-k film were analyzed by transmission electron microscopy and electron diffraction spectroscopy. Compared with another MONOS capacitor with nitrided La 2O3 as charge-trapping layer, the one with HfLaON showed better memory characteristics in terms of larger memory window, higher program speed (6.3 V at +14 V for 100 μs), and smaller charge loss (8.2% after 104 sec), due to the HfLaON composite film exhibiting an amorphous structure and the suppressed formation of an interlayer at the HfLaON/SiO 2 interface. © 2012 IEEE.-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits Proceedingsen_US
dc.rightsIEEE Conference on Electron Devices and Solid-State Circuits Proceedings. Copyright © IEEE.-
dc.rights©2012 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectCharge-trapping-
dc.subjectHfLaON-
dc.subjectNonvolatile memory-
dc.titleHfON/LaON as charge-trapping layer for nonvolatile memory applicationsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/EDSSC.2012.6482795-
dc.identifier.scopuseid_2-s2.0-84875695400-
dc.identifier.hkuros226029en_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.publisher.placeUnited Statesen_US
dc.customcontrol.immutablesml 131107-

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