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Conference Paper: A study on a metal-insulator-silicon hydrogen sensor with LaTiON as gate insulator

TitleA study on a metal-insulator-silicon hydrogen sensor with LaTiON as gate insulator
Authors
KeywordsSchottky-diode
Hydrogen sensor
Silicon
Gate insulator
LaTiON
Issue Date2012
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/wps/find/journaldescription.cws_home/714716/description#description
Citation
The 2012 International Conference on Solid State Devices and Materials Science (SSDMS 2012), Macao, China, 1-2 April 2012. In Physics Procedia, 2012, v. 25, p. 50-55 How to Cite?
AbstractAmongst the many types of semiconductor hydrogen sensors currently studied, Schottky-diodes are preferable as they are simple to fabricate and exhibit high sensitivities and fast response times. To enhance the sensor's performance, a gate insulator is deposited in order to minimize interfacial diffusion between the electrode and the substrate. In this work, we present a novel MIS Schottky-diode hydrogen sensor with LaTiON as gate insulator. The hydrogen-sensing properties (sensitivity, barrier height variation) were examined from room temperature (RT) to 150 °C and its sensitivity was found to reach 2.5 at 100 °C. Moreover, the hydrogen reaction kinetics were studied and these results showed that the sensor was very sensitive to hydrogen ambient.
DescriptionAll accepted papers of this conference will be published by Physics Procedia (ISSN: 1875-3892) by (Elsevier)
Persistent Identifierhttp://hdl.handle.net/10722/191620
ISSN
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, Gen_US
dc.contributor.authorYu, Jen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T07:14:42Z-
dc.date.available2013-10-15T07:14:42Z-
dc.date.issued2012en_US
dc.identifier.citationThe 2012 International Conference on Solid State Devices and Materials Science (SSDMS 2012), Macao, China, 1-2 April 2012. In Physics Procedia, 2012, v. 25, p. 50-55en_US
dc.identifier.issn1875-3892 (Online)-
dc.identifier.urihttp://hdl.handle.net/10722/191620-
dc.descriptionAll accepted papers of this conference will be published by Physics Procedia (ISSN: 1875-3892) by (Elsevier)-
dc.description.abstractAmongst the many types of semiconductor hydrogen sensors currently studied, Schottky-diodes are preferable as they are simple to fabricate and exhibit high sensitivities and fast response times. To enhance the sensor's performance, a gate insulator is deposited in order to minimize interfacial diffusion between the electrode and the substrate. In this work, we present a novel MIS Schottky-diode hydrogen sensor with LaTiON as gate insulator. The hydrogen-sensing properties (sensitivity, barrier height variation) were examined from room temperature (RT) to 150 °C and its sensitivity was found to reach 2.5 at 100 °C. Moreover, the hydrogen reaction kinetics were studied and these results showed that the sensor was very sensitive to hydrogen ambient.-
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/wps/find/journaldescription.cws_home/714716/description#description-
dc.relation.ispartofPhysics Procediaen_US
dc.subjectSchottky-diode-
dc.subjectHydrogen sensor-
dc.subjectSilicon-
dc.subjectGate insulator-
dc.subjectLaTiON-
dc.titleA study on a metal-insulator-silicon hydrogen sensor with LaTiON as gate insulatoren_US
dc.typeConference_Paperen_US
dc.identifier.emailYu, J: jcwyu@hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1016/j.phpro.2012.03.048-
dc.identifier.hkuros225768en_US
dc.identifier.volume25-
dc.identifier.spage50-
dc.identifier.epage55-
dc.identifier.isiWOS:000305960300008-
dc.publisher.placeNetherlandsen_US
dc.customcontrol.immutablesml 131106-

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