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Article: Ga2O3(Gd2O3) as Charge-Trapping Layer for Nonvolatile Memory Applications

TitleGa2O3(Gd2O3) as Charge-Trapping Layer for Nonvolatile Memory Applications
Authors
Issue Date2013
Citation
IEEE Transactions on Nanotechnology, 2013, v. 12, p. 157-162 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/191389
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHuang, Xen_US
dc.contributor.authorSin, JKOen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T06:55:36Z-
dc.date.available2013-10-15T06:55:36Z-
dc.date.issued2013en_US
dc.identifier.citationIEEE Transactions on Nanotechnology, 2013, v. 12, p. 157-162en_US
dc.identifier.urihttp://hdl.handle.net/10722/191389-
dc.languageengen_US
dc.relation.ispartofIEEE Transactions on Nanotechnologyen_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2013 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleGa2O3(Gd2O3) as Charge-Trapping Layer for Nonvolatile Memory Applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TNANO.2012.2236350-
dc.identifier.hkuros226007en_US
dc.identifier.volume12en_US
dc.identifier.spage157en_US
dc.identifier.epage162en_US
dc.identifier.isiWOS:000316201000008-

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