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Article: Improved Sensing Characteristics of a Novel Pt/HfTiO2/SiC Schottky-Diode Hydrogen Sensor

TitleImproved Sensing Characteristics of a Novel Pt/HfTiO2/SiC Schottky-Diode Hydrogen Sensor
Authors
KeywordsAnnealing
HfTiO 2
Schottky diode
SiC-based hydrogen sensor
Issue Date2012
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2012, v. 59 n. 10, p. 2818-2824 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/191383
ISSN
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTang, WMen_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T06:55:34Z-
dc.date.available2013-10-15T06:55:34Z-
dc.date.issued2012en_US
dc.identifier.citationIEEE Transactions on Electron Devices, 2012, v. 59 n. 10, p. 2818-2824en_US
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/191383-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16-
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.subjectAnnealing-
dc.subjectHfTiO 2-
dc.subjectSchottky diode-
dc.subjectSiC-based hydrogen sensor-
dc.titleImproved Sensing Characteristics of a Novel Pt/HfTiO2/SiC Schottky-Diode Hydrogen Sensoren_US
dc.typeArticleen_US
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2012.2209430-
dc.identifier.scopuseid_2-s2.0-84866734785-
dc.identifier.hkuros225964en_US
dc.identifier.volumeED-59en_US
dc.identifier.spage2818en_US
dc.identifier.epage2824en_US
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000309132200036-
dc.identifier.issnl0018-9383-

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