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Article: A reduced electron-extraction barrier at a interface between a polymer poly(3-hexylthiophene) layer and an indium tin oxide layer

TitleA reduced electron-extraction barrier at a interface between a polymer poly(3-hexylthiophene) layer and an indium tin oxide layer
Authors
Issue Date2013
Citation
Organic Electronics, 2013, v. 14, p. 457–463 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/189026
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorDing, Ben_US
dc.contributor.authorChoy, WCHen_US
dc.contributor.authorKwok, WMen_US
dc.contributor.authorYao, Yen_US
dc.contributor.authorHo, KYFen_US
dc.contributor.authorWu, CQen_US
dc.contributor.authorHou, XYen_US
dc.date.accessioned2013-09-17T14:24:36Z-
dc.date.available2013-09-17T14:24:36Z-
dc.date.issued2013en_US
dc.identifier.citationOrganic Electronics, 2013, v. 14, p. 457–463en_US
dc.identifier.urihttp://hdl.handle.net/10722/189026-
dc.languageengen_US
dc.relation.ispartofOrganic Electronicsen_US
dc.titleA reduced electron-extraction barrier at a interface between a polymer poly(3-hexylthiophene) layer and an indium tin oxide layeren_US
dc.typeArticleen_US
dc.identifier.emailDing, B: bfding@hku.hken_US
dc.identifier.emailChoy, WCH: chchoy@eee.hku.hken_US
dc.identifier.authorityChoy, WCH=rp00218en_US
dc.identifier.doi10.1016/j.orgel.2012.12.007-
dc.identifier.hkuros221999en_US
dc.identifier.volume14en_US
dc.identifier.spage457en_US
dc.identifier.epage463en_US
dc.identifier.isiWOS:000314658700004-

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