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Article: Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H2 treatment

TitleStudy of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H2 treatment
Authors
Issue Date2013
PublisherElsevier B.V.. The Journal's web site is located at http://www.elsevier.com/locate/cplett
Citation
Chemical Physics Letters, 2013, v. 579, p. 90-93 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/186168

 

DC FieldValueLanguage
dc.contributor.authorCai, Xen_US
dc.contributor.authorLiang, HWen_US
dc.contributor.authorLiu, YDen_US
dc.contributor.authorShen, RSen_US
dc.contributor.authorXia, XCen_US
dc.contributor.authorLiu, Yen_US
dc.contributor.authorLing, FCCen_US
dc.contributor.authorDu, GTen_US
dc.date.accessioned2013-08-20T11:57:25Z-
dc.date.available2013-08-20T11:57:25Z-
dc.date.issued2013en_US
dc.identifier.citationChemical Physics Letters, 2013, v. 579, p. 90-93en_US
dc.identifier.urihttp://hdl.handle.net/10722/186168-
dc.languageengen_US
dc.publisherElsevier B.V.. The Journal's web site is located at http://www.elsevier.com/locate/cpletten_US
dc.relation.ispartofChemical Physics Lettersen_US
dc.titleStudy of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H2 treatmenten_US
dc.typeArticleen_US
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hken_US
dc.identifier.authorityLing, FCC=rp00747en_US
dc.identifier.doi10.1016/j.cplett.2013.06.022-
dc.identifier.hkuros218998en_US
dc.identifier.volume579en_US
dc.identifier.spage90en_US
dc.identifier.epage93en_US
dc.publisher.placeAmsterdamen_US

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