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Article: The effect of Ga-doped nanocrystalline ZnO electrode on deep-ultraviolet enhanced GaN photodetector

TitleThe effect of Ga-doped nanocrystalline ZnO electrode on deep-ultraviolet enhanced GaN photodetector
Authors
Issue Date2013
PublisherAIP Publishing LLC. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2013, v. 102 n. 21, article no. 212104, p. 1-4 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/186162
ISSN
2019 Impact Factor: 3.597
2015 SCImago Journal Rankings: 1.105

 

DC FieldValueLanguage
dc.contributor.authorWang, RXen_US
dc.contributor.authorYang, LCen_US
dc.contributor.authorZhang, YMen_US
dc.contributor.authorXu, Sen_US
dc.contributor.authorFu, Ken_US
dc.contributor.authorZhang, BSen_US
dc.contributor.authorWang, Jen_US
dc.contributor.authorXu, Ken_US
dc.contributor.authorYang, Hen_US
dc.date.accessioned2013-08-20T11:57:24Z-
dc.date.available2013-08-20T11:57:24Z-
dc.date.issued2013en_US
dc.identifier.citationApplied Physics Letters, 2013, v. 102 n. 21, article no. 212104, p. 1-4-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/186162-
dc.languageengen_US
dc.publisherAIP Publishing LLC. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCopyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2013, v. 102 n. 21, article no. 212104, p. 1-4 and may be found at https://doi.org/10.1063/1.4808381-
dc.titleThe effect of Ga-doped nanocrystalline ZnO electrode on deep-ultraviolet enhanced GaN photodetectoren_US
dc.typeArticleen_US
dc.identifier.emailXu, S: sjxu@hku.hken_US
dc.identifier.emailWang, J: jfwwang@hku.hken_US
dc.identifier.authorityXu, S=rp00821en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4808381-
dc.identifier.scopuseid_2-s2.0-84879073405-
dc.identifier.hkuros218755en_US
dc.identifier.volume102en_US
dc.identifier.issue21-
dc.identifier.spagearticle no. 212104, p. 1-
dc.identifier.epagearticle no. 212104, p. 4-
dc.publisher.placeNew Yorken_US

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