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Article: Combined helium ion beam and nanoimprint lithography attains 4 nm half-pitch dense patterns

TitleCombined helium ion beam and nanoimprint lithography attains 4 nm half-pitch dense patterns
Authors
Issue Date2012
PublisherAmerican Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/
Citation
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012, v. 30 n. 6, article no. 06F304 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/185964

 

DC FieldValueLanguage
dc.contributor.authorLi, Wen_US
dc.contributor.authorWu, Wen_US
dc.contributor.authorWilliams, RSen_US
dc.date.accessioned2013-08-20T11:48:11Z-
dc.date.available2013-08-20T11:48:11Z-
dc.date.issued2012en_US
dc.identifier.citationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012, v. 30 n. 6, article no. 06F304en_US
dc.identifier.urihttp://hdl.handle.net/10722/185964-
dc.languageengen_US
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/-
dc.relation.ispartofJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structuresen_US
dc.rightsCopyright 2012 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The article appeared in Journal of Vacuum Science and Technology: Part B Microelectronics and Nanometer Structures, 2012, v. 30 n. 6, article no. 06F304 and may be found at http://scitation.aip.org.eproxy2.lib.hku.hk/content/avs/journal/jvstb/30/6/10.1116/1.4758768-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleCombined helium ion beam and nanoimprint lithography attains 4 nm half-pitch dense patternsen_US
dc.typeArticleen_US
dc.identifier.emailLi, W: liwd@hku.hken_US
dc.identifier.authorityLi, W=rp01581en_US
dc.description.naturepublished_or_final_version-
dc.identifier.hkuros220426en_US
dc.identifier.volume30en_US
dc.identifier.spage06F304en_US
dc.identifier.epage06F304en_US

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