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Article: p-type ZnO nanowire arrays

Titlep-type ZnO nanowire arrays
Authors
Issue Date2008
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/nanolett
Citation
Nano Letters, 2008, v. 8 n. 8, p. 2591-2597 How to Cite?
AbstractWell-aligned ZnO nanowire (NW) arrays with durable and reproducible p-type conductivity were synthesized on α-sapphire substrates by using N 2O as a dopant source via vapor-liquid-solid growth. The nitrogen-doped ZnO NWs are single-crystalline and grown predominantly along the [110] direction, in contrast to the [001] direction of undoped ZnO NWs. Electrical transport measurements reveal that the nondoped ZnO NWs exhibit n-type conductivity, whereas the nitrogen-doped ZnO NWs show compensated highly resistive n-type and finally p-type conductivity upon increasing N2O ratio in the reaction atmosphere. The electrical properties of p-type ZnO NWs are stable and reproducible with a hole concentration of (1-2) × 10 18 cm3 and a field-effect mobility of 10-17 cm2 V -2 s-1. Surface adsorptions have a significant effect on the transport properties of NWs. Temperature-dependent PL spectra of N-doped ZnO NWs show acceptor-bound-exciton emission, which corroborates the p-type conductivity. The realization of p-type ZnO NWs with durable and controlled transport properties is important for fabrication of nanoscale electronic and optoelectronic devices. © 2008 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/185478
ISSN
2015 Impact Factor: 13.779
2015 SCImago Journal Rankings: 9.006
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYuan, GDen_US
dc.contributor.authorZhang, WJen_US
dc.contributor.authorJie, JSen_US
dc.contributor.authorFan, Xen_US
dc.contributor.authorZapien, JAen_US
dc.contributor.authorLeung, YHen_US
dc.contributor.authorLuo, LBen_US
dc.contributor.authorWang, PFen_US
dc.contributor.authorLee, CSen_US
dc.contributor.authorLee, STen_US
dc.date.accessioned2013-07-30T07:36:49Z-
dc.date.available2013-07-30T07:36:49Z-
dc.date.issued2008en_US
dc.identifier.citationNano Letters, 2008, v. 8 n. 8, p. 2591-2597en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://hdl.handle.net/10722/185478-
dc.description.abstractWell-aligned ZnO nanowire (NW) arrays with durable and reproducible p-type conductivity were synthesized on α-sapphire substrates by using N 2O as a dopant source via vapor-liquid-solid growth. The nitrogen-doped ZnO NWs are single-crystalline and grown predominantly along the [110] direction, in contrast to the [001] direction of undoped ZnO NWs. Electrical transport measurements reveal that the nondoped ZnO NWs exhibit n-type conductivity, whereas the nitrogen-doped ZnO NWs show compensated highly resistive n-type and finally p-type conductivity upon increasing N2O ratio in the reaction atmosphere. The electrical properties of p-type ZnO NWs are stable and reproducible with a hole concentration of (1-2) × 10 18 cm3 and a field-effect mobility of 10-17 cm2 V -2 s-1. Surface adsorptions have a significant effect on the transport properties of NWs. Temperature-dependent PL spectra of N-doped ZnO NWs show acceptor-bound-exciton emission, which corroborates the p-type conductivity. The realization of p-type ZnO NWs with durable and controlled transport properties is important for fabrication of nanoscale electronic and optoelectronic devices. © 2008 American Chemical Society.en_US
dc.languageengen_US
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/nanoletten_US
dc.relation.ispartofNano Lettersen_US
dc.titlep-type ZnO nanowire arraysen_US
dc.typeArticleen_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1021/nl073022ten_US
dc.identifier.pmid18624388-
dc.identifier.scopuseid_2-s2.0-57049095918en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-57049095918&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume8en_US
dc.identifier.issue8en_US
dc.identifier.spage2591en_US
dc.identifier.epage2597en_US
dc.identifier.isiWOS:000258440700084-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYuan, GD=25723992900en_US
dc.identifier.scopusauthoridZhang, WJ=37070726100en_US
dc.identifier.scopusauthoridJie, JS=14822279600en_US
dc.identifier.scopusauthoridFan, X=13103701900en_US
dc.identifier.scopusauthoridZapien, JA=6701453903en_US
dc.identifier.scopusauthoridLeung, YH=16042693500en_US
dc.identifier.scopusauthoridLuo, LB=8523035900en_US
dc.identifier.scopusauthoridWang, PF=7405458795en_US
dc.identifier.scopusauthoridLee, CS=16464316100en_US
dc.identifier.scopusauthoridLee, ST=7601407495en_US

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