File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

TitleSelective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application
Authors
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 91 n. 23 How to Cite?
AbstractVertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWsAZOp-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/185477
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChung, TFen_US
dc.contributor.authorLuo, LBen_US
dc.contributor.authorHe, ZBen_US
dc.contributor.authorLeung, YHen_US
dc.contributor.authorShafiq, Ien_US
dc.contributor.authorYao, ZQen_US
dc.contributor.authorLee, STen_US
dc.date.accessioned2013-07-30T07:36:48Z-
dc.date.available2013-07-30T07:36:48Z-
dc.date.issued2007en_US
dc.identifier.citationApplied Physics Letters, 2007, v. 91 n. 23en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/185477-
dc.description.abstractVertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWsAZOp-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices. © 2007 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleSelective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device applicationen_US
dc.typeArticleen_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2811717en_US
dc.identifier.scopuseid_2-s2.0-36849023803en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-36849023803&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume91en_US
dc.identifier.issue23en_US
dc.identifier.isiWOS:000251450600093-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChung, TF=23484266000en_US
dc.identifier.scopusauthoridLuo, LB=8523035900en_US
dc.identifier.scopusauthoridHe, ZB=27168767500en_US
dc.identifier.scopusauthoridLeung, YH=16042693500en_US
dc.identifier.scopusauthoridShafiq, I=23478539300en_US
dc.identifier.scopusauthoridYao, ZQ=16200022100en_US
dc.identifier.scopusauthoridLee, ST=7601407495en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats