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Conference Paper: Electroresistance and current-induced metastable states in thin films of half-doped manganite Pr0.5Sr0.5MnO3

TitleElectroresistance and current-induced metastable states in thin films of half-doped manganite Pr0.5Sr0.5MnO3
Authors
Issue Date2013
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
12th Joint MMM-Intermag Conference. In Journal of Applied Physics, 2013, v. 113, p. 17E151 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/183789

 

DC FieldValueLanguage
dc.contributor.authorWang, Jen_US
dc.contributor.authorChen, Len_US
dc.contributor.authorJiang, Yen_US
dc.contributor.authorGao, Jen_US
dc.date.accessioned2013-06-18T04:14:49Z-
dc.date.available2013-06-18T04:14:49Z-
dc.date.issued2013en_US
dc.identifier.citation12th Joint MMM-Intermag Conference. In Journal of Applied Physics, 2013, v. 113, p. 17E151en_US
dc.identifier.urihttp://hdl.handle.net/10722/183789-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_US
dc.rightsAfter publication: Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (citation of published article) and may be found at (URL/link for published article abstract). Before publication: The following article has been submitted to/accepted by [Name of Journal]. After it is published, it will be found at (URL/link to the entry page of the journal).en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2013, v. 113, p. 17E151) and may be found at (http://jap.aip.org/resource/1/japiau/v113/i17/p17E151_s1).-
dc.titleElectroresistance and current-induced metastable states in thin films of half-doped manganite Pr0.5Sr0.5MnO3en_US
dc.typeConference_Paperen_US
dc.identifier.emailWang, J: jfwwang@hku.hken_US
dc.identifier.emailChen, L: chen0003@hku.hken_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.description.naturepublished_or_final_version-
dc.identifier.hkuros214835en_US
dc.identifier.volume113en_US
dc.identifier.spage17E151en_US
dc.identifier.epage17E151en_US

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