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Article: A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals

TitleA study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals
Authors
Issue Date2013
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2013, v. 113, p. 124502:1-8 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/182179

 

DC FieldValueLanguage
dc.contributor.authorMtangi, Wen_US
dc.contributor.authorSchmidt, Men_US
dc.contributor.authorAuret, FDen_US
dc.contributor.authorMeyer, WEen_US
dc.contributor.authorJanse van Rensburg, PJen_US
dc.contributor.authorDiale, Men_US
dc.contributor.authorNel, JMen_US
dc.contributor.authorDas, AGMen_US
dc.contributor.authorLing, FCCen_US
dc.contributor.authorChawanda, Aen_US
dc.date.accessioned2013-04-17T08:31:40Z-
dc.date.available2013-04-17T08:31:40Z-
dc.date.issued2013en_US
dc.identifier.citationJournal of Applied Physics, 2013, v. 113, p. 124502:1-8en_US
dc.identifier.urihttp://hdl.handle.net/10722/182179-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_US
dc.rightsAfter publication: Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (citation of published article) and may be found at (URL/link for published article abstract). Before publication: The following article has been submitted to/accepted by [Name of Journal]. After it is published, it will be found at (URL/link to the entry page of the journal).en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleA study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystalsen_US
dc.typeArticleen_US
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hken_US
dc.identifier.authorityLing, FCC=rp00747en_US
dc.description.naturepublished_or_final_version-
dc.identifier.hkuros213847en_US
dc.identifier.volume113en_US
dc.identifier.spage124502:1en_US
dc.identifier.epage8en_US

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