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Article: Post-growth annealing study of heavily Ga-doped zinc oxide grown by radio frequency magnetron sputtering

TitlePost-growth annealing study of heavily Ga-doped zinc oxide grown by radio frequency magnetron sputtering
Authors
Issue Date2013
PublisherIOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/Journals/jpd
Citation
Journal of Physics D: Applied Physics, 2013, v. 46, p. 135104:1-8 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/181719

 

DC FieldValueLanguage
dc.contributor.authorPak, CMen_US
dc.contributor.authorSu, Sen_US
dc.contributor.authorLing, FCCen_US
dc.contributor.authorLu, YMen_US
dc.contributor.authorZhu, DLen_US
dc.date.accessioned2013-03-19T03:54:40Z-
dc.date.available2013-03-19T03:54:40Z-
dc.date.issued2013en_US
dc.identifier.citationJournal of Physics D: Applied Physics, 2013, v. 46, p. 135104:1-8en_US
dc.identifier.urihttp://hdl.handle.net/10722/181719-
dc.languageengen_US
dc.publisherIOP Publishing Ltd. The Journal's web site is located at http://www.iop.org/Journals/jpden_US
dc.relation.ispartofJournal of Physics D: Applied Physicsen_US
dc.titlePost-growth annealing study of heavily Ga-doped zinc oxide grown by radio frequency magnetron sputteringen_US
dc.typeArticleen_US
dc.identifier.emailSu, S: scsu@hku.hken_US
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hken_US
dc.identifier.authorityLing, FCC=rp00747en_US
dc.identifier.hkuros213652en_US
dc.identifier.volume46en_US
dc.identifier.spage135104:1en_US
dc.identifier.epage8en_US

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