File Download
  Patent History
  • Application
    PC T/CN2005000223 2005-02-24
  • Publication
    WO 2005081066 2005-09-01

published patent: RECTANGULAR CONTACT LITHOGRAPHY FOR CIRCUIT PERFORMANCE IMPROVEMENT

TitleRECTANGULAR CONTACT LITHOGRAPHY FOR CIRCUIT PERFORMANCE IMPROVEMENT
Priority Date2004-02-24 US 10/546948P
Inventors
Issue Date2005
Citation
WO Published patent application WO 2005081066. World Intellectual Property Organization (WIPO), PatentScope, 2005 How to Cite?
AbstractAn optical lithography method is disclosed that uses double exposure of a reusable a chromeless alternating phase-shifting template mask and a binary trim mask to fabricate regularly-placed rectangular contacts in standard cells of application-specific integrated circuits (ASICs). A first exposure of the reusable chromeless alternating phase-shifting template ask forms periodic dark lines on a wafer and a second exposure of binary tri mask remove the unwanted part of the dark lines and the small cuts of the dark lines left form the rectangular-placed contacts. All contacts are placed regularly in one direction while randomly in the perpendicular direction. The method of the invention can be used in the fabrication of standard cells in application-specific integrated circuits (ASICs) to decrease circuit area an improve circuit performance.
Persistent Identifierhttp://hdl.handle.net/10722/177100

 

DC FieldValueLanguage
dc.date.accessioned2012-11-30T08:39:07Z-
dc.date.available2012-11-30T08:39:07Z-
dc.date.issued2005-
dc.identifier.citationWO Published patent application WO 2005081066. World Intellectual Property Organization (WIPO), PatentScope, 2005en_HK
dc.identifier.urihttp://hdl.handle.net/10722/177100-
dc.description.abstractAn optical lithography method is disclosed that uses double exposure of a reusable a chromeless alternating phase-shifting template mask and a binary trim mask to fabricate regularly-placed rectangular contacts in standard cells of application-specific integrated circuits (ASICs). A first exposure of the reusable chromeless alternating phase-shifting template ask forms periodic dark lines on a wafer and a second exposure of binary tri mask remove the unwanted part of the dark lines and the small cuts of the dark lines left form the rectangular-placed contacts. All contacts are placed regularly in one direction while randomly in the perpendicular direction. The method of the invention can be used in the fabrication of standard cells in application-specific integrated circuits (ASICs) to decrease circuit area an improve circuit performance.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License For Public Patent Documentsen_US
dc.titleRECTANGULAR CONTACT LITHOGRAPHY FOR CIRCUIT PERFORMANCE IMPROVEMENTen_HK
dc.typePatenten_US
dc.description.naturepublished_or_final_version-
dc.contributor.inventorWang, Junen_HK
dc.contributor.inventorWong, Alfred, K., Ken_HK
dc.contributor.inventorLam, EYMen_HK
patents.identifier.applicationPC T/CN2005000223en_HK
patents.description.assigneeUNIV HONG KONG [CN]; WANG JUN [CN]; WONG ALFRED K K [US]; LAM EDMUND Y [CN]en_HK
patents.description.countryWorld Intellectual Property Organization (WIPO)en_HK
patents.date.publication2005-09-01en_HK
patents.date.application2005-02-24en_HK
patents.date.priority2004-02-24 US 10/546948Pen_HK
patents.description.ccWOen_HK
patents.identifier.publicationWO 2005081066en_HK
patents.relation.familyUS 2005196685 (A1) 2005-09-08en_HK
patents.relation.familyUS 7569308 (B2) 2009-08-04en_HK
patents.relation.familyWO 2005081066 (A1) 2005-09-01en_HK
patents.description.kindA1en_HK
patents.typePatent_publisheden_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats