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  Patent History
  • Application
    US 11/690188 2007-03-23
  • Publication
    US 2008105955 2008-05-08
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published patent: Method For Epitaxial Growth of (110)-Oriented SrTiO3 Thin Films on Silicon Without Template

TitleMethod For Epitaxial Growth of (110)-Oriented SrTiO3 Thin Films on Silicon Without Template
Priority Date2007-03-23 US 11/690188
2006-03-23 US 11/785668P
Inventors
Issue Date2008
Citation
US Published patent application US 2008105955. Washington, DC: US Patent and Trademark Office (USPTO), 2008 How to Cite?
AbstractA process and structure utilizes pulsed laser deposition technique to grow SrTiO3 (STO) films with single ( 110 ) out-of-plane orientation upon a surface of all ( 100 ), ( 110 ) and ( 111 )-oriented silicon (Si) substrates. No designed buffer layer is needed beneath the STO thin films. The in-plane alignments for the epitaxial STO films grown directly on Si ( 100 ) are as STO [ 001 ]//Si [ 001 ] and STO [ 1 1 0 ]/Si [ 010 ]. The SrTiO3/Si interface is epitaxially crystallized without any amorphous oxide layer. The formation of a coincident site lattice at the interface between Si and a Sr-silicate and/or STO helps to stabilize STO in the epitaxial orientation. The invention can be applied to epitaxial template and barrier for the integration of many other functional oxide materials on silicon.; In particular, the ( 110 )-oriented STO structure is useful for practical applications such as the preparation of ferroelectric-insulator-semiconductor devices as well as providing a broad solution to the generic problem of polarity discontinuities at perovskite heterointerfaces.
Persistent Identifierhttp://hdl.handle.net/10722/176959

 

DC FieldValueLanguage
dc.date.accessioned2012-11-30T08:38:51Z-
dc.date.available2012-11-30T08:38:51Z-
dc.date.issued2008-
dc.identifier.citationUS Published patent application US 2008105955. Washington, DC: US Patent and Trademark Office (USPTO), 2008en_HK
dc.identifier.urihttp://hdl.handle.net/10722/176959-
dc.description.abstractA process and structure utilizes pulsed laser deposition technique to grow SrTiO3 (STO) films with single ( 110 ) out-of-plane orientation upon a surface of all ( 100 ), ( 110 ) and ( 111 )-oriented silicon (Si) substrates. No designed buffer layer is needed beneath the STO thin films. The in-plane alignments for the epitaxial STO films grown directly on Si ( 100 ) are as STO [ 001 ]//Si [ 001 ] and STO [ 1 <O OSTYLE="SINGLE"> 1 0 ]/Si [ 010 ]. The SrTiO3/Si interface is epitaxially crystallized without any amorphous oxide layer. The formation of a coincident site lattice at the interface between Si and a Sr-silicate and/or STO helps to stabilize STO in the epitaxial orientation. The invention can be applied to epitaxial template and barrier for the integration of many other functional oxide materials on silicon.; In particular, the ( 110 )-oriented STO structure is useful for practical applications such as the preparation of ferroelectric-insulator-semiconductor devices as well as providing a broad solution to the generic problem of polarity discontinuities at perovskite heterointerfaces.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License For Public Patent Documentsen_US
dc.titleMethod For Epitaxial Growth of (110)-Oriented SrTiO3 Thin Films on Silicon Without Templateen_HK
dc.typePatenten_US
dc.description.naturepublished_or_final_versionen_US
dc.contributor.inventorHao Jianhuaen_HK
dc.contributor.inventorGao, Jen_HK
patents.identifier.applicationUS 11/690188en_HK
patents.description.assigneeTHE UNIVERSITY OF HONG KONGen_HK
patents.description.countryUnited States of Americaen_HK
patents.date.publication2008-05-08en_HK
patents.date.application2007-03-23en_HK
patents.date.priority2007-03-23 US 11/690188en_HK
patents.date.priority2006-03-23 US 11/785668Pen_HK
patents.description.ccUSen_HK
patents.identifier.publicationUS 2008105955en_HK
patents.relation.familyUS 2008105955 (A1) 2008-05-08en_HK
patents.relation.familyUS 7718516 (B2) 2010-05-18en_HK
patents.description.kindA1en_HK
patents.typePatent_publisheden_HK

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