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Conference Paper: Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes

TitleEnhancement of extraction efficiency in laser-debonded GaN light emitting diodes
Authors
Chan, CPYue, TMSurya, CNg, AMCDjurišić, ABScholz, FLiu, CKLi, M
Issue Date2006
Citation
2005 Ieee Conference On Electron Devices And Solid-State Circuits, Edssc, 2006, p. 479-482 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2005.1635312
AbstractWe conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photoelectrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency. © 2005 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/176187
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChan, CPen_US
dc.contributor.authorYue, TMen_US
dc.contributor.authorSurya, Cen_US
dc.contributor.authorNg, AMCen_US
dc.contributor.authorDjurišić, ABen_US
dc.contributor.authorScholz, Fen_US
dc.contributor.authorLiu, CKen_US
dc.contributor.authorLi, Men_US
dc.date.accessioned2012-11-26T09:06:42Z-
dc.date.available2012-11-26T09:06:42Z-
dc.date.issued2006en_US
dc.identifier.citation2005 Ieee Conference On Electron Devices And Solid-State Circuits, Edssc, 2006, p. 479-482en_US
dc.identifier.urihttp://hdl.handle.net/10722/176187-
dc.description.abstractWe conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photoelectrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency. © 2005 IEEE.en_US
dc.languageengen_US
dc.relation.ispartof2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSCen_US
dc.titleEnhancement of extraction efficiency in laser-debonded GaN light emitting diodesen_US
dc.typeConference_Paperen_US
dc.identifier.emailDjurišić, AB: dalek@hku.hken_US
dc.identifier.authorityDjurišić, AB=rp00690en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/EDSSC.2005.1635312en_US
dc.identifier.scopuseid_2-s2.0-43549096375en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-43549096375&selection=ref&src=s&origin=recordpageen_US
dc.identifier.spage479en_US
dc.identifier.epage482en_US
dc.identifier.scopusauthoridChan, CP=7404814427en_US
dc.identifier.scopusauthoridYue, TM=7101867231en_US
dc.identifier.scopusauthoridSurya, C=7003939256en_US
dc.identifier.scopusauthoridNg, AMC=12140078600en_US
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_US
dc.identifier.scopusauthoridScholz, F=7201826366en_US
dc.identifier.scopusauthoridLiu, CK=13405320200en_US
dc.identifier.scopusauthoridLi, M=51564360100en_US

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