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Conference Paper: Study of laser-debonded GaN light emitting diodes

TitleStudy of laser-debonded GaN light emitting diodes
Authors
Issue Date2006
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium Proceedings, 2006, v. 892, p. 257-262 How to Cite?
AbstractWe report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The sapphire substrate was debonded from the GaN material using an excimer laser. The unintentionally doped GaN surface was photo-electrochemically (PEC) etched to form hexagonal pyramid hillocks on the surface, using HeCd laser as the light source. The luminous intensities of the debonded and roughened LEDs at different etching time, as a function of different surface roughness, have been reported. In this experiment, the greatest improvement in the luminous intensities has been achieved at 40mins etching and increased by 60% when compared to the LEDs on sapphire. This increase is attributed to the enhancement in photon extraction efficiency. © 2006 Materials Research Society.
Persistent Identifierhttp://hdl.handle.net/10722/176180
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorChan, CPen_US
dc.contributor.authorYue, TMen_US
dc.contributor.authorSurya, Cen_US
dc.contributor.authorNg, AMCen_US
dc.contributor.authorDjurišić, ABen_US
dc.contributor.authorLiu, CKen_US
dc.contributor.authorLi, Men_US
dc.date.accessioned2012-11-26T09:06:39Z-
dc.date.available2012-11-26T09:06:39Z-
dc.date.issued2006en_US
dc.identifier.citationMaterials Research Society Symposium Proceedings, 2006, v. 892, p. 257-262en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/10722/176180-
dc.description.abstractWe report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The sapphire substrate was debonded from the GaN material using an excimer laser. The unintentionally doped GaN surface was photo-electrochemically (PEC) etched to form hexagonal pyramid hillocks on the surface, using HeCd laser as the light source. The luminous intensities of the debonded and roughened LEDs at different etching time, as a function of different surface roughness, have been reported. In this experiment, the greatest improvement in the luminous intensities has been achieved at 40mins etching and increased by 60% when compared to the LEDs on sapphire. This increase is attributed to the enhancement in photon extraction efficiency. © 2006 Materials Research Society.en_US
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_US
dc.relation.ispartofMaterials Research Society Symposium Proceedingsen_US
dc.titleStudy of laser-debonded GaN light emitting diodesen_US
dc.typeConference_Paperen_US
dc.identifier.emailDjurišić, AB: dalek@hku.hken_US
dc.identifier.authorityDjurišić, AB=rp00690en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-33646389834en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33646389834&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume892en_US
dc.identifier.spage257en_US
dc.identifier.epage262en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChan, CP=7404814427en_US
dc.identifier.scopusauthoridYue, TM=7101867231en_US
dc.identifier.scopusauthoridSurya, C=7003939256en_US
dc.identifier.scopusauthoridNg, AMC=12140078600en_US
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_US
dc.identifier.scopusauthoridLiu, CK=13405320200en_US
dc.identifier.scopusauthoridLi, M=26643642600en_US

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