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Conference Paper: Large excitation-power dependence of pressure coefficients of InxGa1-xN/Iny Ga1-yN quantum wells

TitleLarge excitation-power dependence of pressure coefficients of InxGa1-xN/Iny Ga1-yN quantum wells
Authors
Li, QFang, ZLXu, SJLi, GHXie, MHTong, SYZhang, XHLiu, WChua, SJ
Issue Date2003
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
Citation
Physica Status Solidi (B) Basic Research, 2003, v. 235 n. 2, p. 427-431 How to Cite?
DOI: http://dx.doi.org/10.1002/pssb.200301596
AbstractExcitation-power dependence of hydrostatic pressure coefficients (dE/dP) of InxGa1-xN/InyGa1-yN multiple quantum wells is reported. When the excitation power increases from 1.0 to 33 mW, dE/dP increases from 26.9 to 33.8 meV/GPa, which is an increase by 25%. A saturation behavior of dE/dP with the excitation power is observed. The increment of dE/dP with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.
Persistent Identifierhttp://hdl.handle.net/10722/176167
ISSN
0370-1972
2021 Impact Factor: 1.782
2020 SCImago Journal Rankings: 0.510
ISI Accession Number ID
WOS:000181009000039
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, Qen_US
dc.contributor.authorFang, ZLen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorLi, GHen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorTong, SYen_US
dc.contributor.authorZhang, XHen_US
dc.contributor.authorLiu, Wen_US
dc.contributor.authorChua, SJen_US
dc.date.accessioned2012-11-26T09:06:35Z-
dc.date.available2012-11-26T09:06:35Z-
dc.date.issued2003en_US
dc.identifier.citationPhysica Status Solidi (B) Basic Research, 2003, v. 235 n. 2, p. 427-431en_US
dc.identifier.issn0370-1972en_US
dc.identifier.urihttp://hdl.handle.net/10722/176167-
dc.description.abstractExcitation-power dependence of hydrostatic pressure coefficients (dE/dP) of InxGa1-xN/InyGa1-yN multiple quantum wells is reported. When the excitation power increases from 1.0 to 33 mW, dE/dP increases from 26.9 to 33.8 meV/GPa, which is an increase by 25%. A saturation behavior of dE/dP with the excitation power is observed. The increment of dE/dP with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.en_US
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.comen_US
dc.relation.ispartofPhysica Status Solidi (B) Basic Researchen_US
dc.titleLarge excitation-power dependence of pressure coefficients of InxGa1-xN/Iny Ga1-yN quantum wellsen_US
dc.typeConference_Paperen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/pssb.200301596en_US
dc.identifier.scopuseid_2-s2.0-0037324854en_US
dc.identifier.hkuros75730-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037324854&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume235en_US
dc.identifier.issue2en_US
dc.identifier.spage427en_US
dc.identifier.epage431en_US
dc.identifier.isiWOS:000181009000039-
dc.publisher.placeGermanyen_US
dc.identifier.scopusauthoridLi, Q=7405861869en_US
dc.identifier.scopusauthoridFang, ZL=7402682054en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridLi, GH=8161794300en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridTong, SY=24512624800en_US
dc.identifier.scopusauthoridZhang, XH=13006006900en_US
dc.identifier.scopusauthoridLiu, W=36078712200en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.issnl0370-1972-

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